Issued Patents All Time
Showing 26–44 of 44 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8058687 | Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET | YongZhong Hu | 2011-11-15 |
| 8053315 | Method to manufacture split gate with high density plasma oxide layer as inter-polysilicon insulation layer | Yong-Zhong Hu, Francois Hebert, Hong Chang, Mengyu Pan, Yingying Lou +1 more | 2011-11-08 |
| 8048775 | Process of forming ultra thin wafers having an edge support ring | Tao Feng | 2011-11-01 |
| 8035159 | Device structure and manufacturing method using HDP deposited source-body implant block | Anup Bhalla, Francois Hebert, Sik Lui | 2011-10-11 |
| 8022482 | Device configuration of asymmetrical DMOSFET with schottky barrier source | YongZhong Hu | 2011-09-20 |
| 8008151 | Shallow source MOSFET | Tiesheng Li, Anup Bhalla, Hong Chang, Moses Ho | 2011-08-30 |
| 7932148 | Processes for manufacturing MOSFET devices with excessive round-hole shielded gate trench (SGT) | Hong Chang, Tiesheng Li, Yu Wang | 2011-04-26 |
| 7928507 | Polysilicon control etch-back indicator | Yu Wang, Tiesheng Li, Hong Chang | 2011-04-19 |
| 7875541 | Shallow source MOSFET | Tiesheng Li, Anup Bhalla, Hong Chang, Moses Ho | 2011-01-25 |
| 7855422 | Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process | YongZhong Hu | 2010-12-21 |
| 7829941 | Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regions | YongZhong Hu | 2010-11-09 |
| 7824977 | Completely decoupled high voltage and low voltage transistor manufacturing processes | YongZhong Hu | 2010-11-02 |
| 7805687 | One-time programmable (OTP) memory cell | YongZhong Hu, Yu-Cheng Chang | 2010-09-28 |
| 7667264 | Shallow source MOSFET | Tiesheng Li, Anup Bhalla, Hong Chang, Moses Ho | 2010-02-23 |
| 7632733 | Polysilicon control etch-back indicator | Yu Wang, Tiesheng Li, Hong Chang | 2009-12-15 |
| 7492005 | Excessive round-hole shielded gate trench (SGT) MOSFET devices and manufacturing processes | Hong Chang, Tiesheng Li, Yu Wang | 2009-02-17 |
| 7256446 | One time programmable memory cell | YongZhong Hu | 2007-08-14 |
| 6509233 | Method of making trench-gated MOSFET having cesium gate oxide layer | Mike F. Chang, Sik Lui | 2003-01-21 |
| 6277695 | Method of forming vertical planar DMOSFET with self-aligned contact | Richard K. Williams, Dorman C. Pitzer, Wayne B. Grabowski, Anthony C. Tsui, Mike F. Chang | 2001-08-21 |