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Multi-VT solution for replacement metal gate bonded stacked FET |
Ruqiang Bao, Junli Wang, Heng Wu |
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| 12374615 |
Electronic devices with a low dielectric constant |
Hsueh-Chung Chen, Su Chen Fan, Carl Radens, Indira Seshadri |
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| 12363990 |
Upper and lower gate configurations of monolithic stacked FinFET transistors |
Chen Zhang, Junli Wang, Ruilong Xie, Sung-Dae Suk |
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| 12336294 |
Gate-cut and separation techniques for enabling independent gate control of stacked transistors |
Ruilong Xie, Nicolas Loubet, Julien Frougier, Lawrence A. Clevenger, Prasad Bhosale +2 more |
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| 12317537 |
Reduced parasitic capacitance semiconductor device containing at least one local interconnect passthrough structure |
Ruilong Xie, Junli Wang, Alexander Reznicek |
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| 12278184 |
Vertically-stacked field effect transistor cell |
Albert M. Chu, Junli Wang, Albert M. Young |
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| 12278237 |
Stacked FETS with non-shared work function metals |
Ruilong Xie, Julien Frougier, Junli Wang, Ruqiang Bao, Rishikesh Krishnan +1 more |
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| 12272648 |
Semiconductor device having a backside power rail |
Ruilong Xie, Junli Wang, Julien Frougier, Lawrence A. Clevenger |
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| 12268031 |
Backside power rails and power distribution network for density scaling |
Ruilong Xie, Kisik Choi, Somnath Ghosh, Sagarika Mukesh, Albert M. Chu +6 more |
2025-04-01 |