Issued Patents 2024
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12132088 | Ohmic electrode for two-dimensional carrier gas (2DCG) semiconductor device | Shih-Chien Liu, Yao-Chung Chang | 2024-10-29 |
| 12107156 | Semiconductor structure, HEMT structure and method of forming the same | Yao-Chung Chang, Po-Chih Chen, Jiun-Lei Jerry Yu | 2024-10-01 |
| 12100757 | Cap structure coupled to source to reduce saturation current in HEMT device | Ming-Cheng Lin, Chen-Bau Wu, Haw-Yun Wu, Liang-Yu Su, Yun-Hsiang Wang | 2024-09-24 |
| 12094838 | Crack stop ring trench to prevent epitaxy crack propagation | Jiun-Yu Chen, Yun-Hsiang Wang, Chia-Hsun Wu, Jiun-Lei Jerry Yu, Po-Chih Chen | 2024-09-17 |
| 12087820 | Semiconductor device having a plurality of III-V semiconductor layers | Yu-Syuan Lin, Jiun-Lei Jerry Yu, Ming-Cheng Lin | 2024-09-10 |
| 12046554 | Device layout design for improving device performance | Shih-Pang Chang, Haw-Yun Wu, Yao-Chung Chang | 2024-07-23 |
| 12046537 | Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV) | Yun-Hsiang Wang, Jiun-Lei Jerry Yu, Po-Chih Chen | 2024-07-23 |
| 11942543 | Semiconductor device structure with high voltage device | Hung-Chou Lin, Yi-Cheng Chiu, Karthick Murukesan, Yi-Min Chen, Shiuan-Jeng Lin +4 more | 2024-03-26 |
| 11908905 | Electrode structure for vertical group III-V device | Yao-Chung Chang, Ru-Yi Su, Wei Wang, Wei-Chen Yang | 2024-02-20 |
| 11862675 | High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device | Karthick Murukesan, Wen-Chih Chiang, Ker Hsiao Huo, Kuo-Ming Wu, Po-Chih Chen +5 more | 2024-01-02 |