Issued Patents 2024
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12176203 | Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant | Fei Zhou, Rahul Sharangpani, Yujin Terasawa, Naoki Takeguchi, Kensuke Yamaguchi +1 more | 2024-12-24 |
| 12160989 | Three-dimensional memory device including an isolation-trench etch stop layer and methods for forming the same | Ramy Nashed Bassely Said, Jiahui Yuan, Senaka Kanakamedala | 2024-12-03 |
| 12150302 | Memory device including mixed oxide charge trapping materials and methods for forming the same | Ramy Nashed Bassely Said, Senaka Kanakamedala, Peng Zhang, Yanli Zhang | 2024-11-19 |
| 12144185 | Method of making ovonic threshold switch selectors using microwave annealing | Oleksandr Mosendz, Hyunsang Hwang, Jangseop Lee | 2024-11-12 |
| 12137554 | Three-dimensional memory device with word-line etch stop liners and method of making thereof | Adarsh Rajashekhar, Fei Zhou | 2024-11-05 |
| 12137565 | Three-dimensional memory device with vertical word line barrier and methods for forming the same | Rahul Sharangpani, Fei Zhou, Adarsh Rajashekhar | 2024-11-05 |
| 12124247 | Implementation of deep neural networks for testing and quality control in the production of memory devices | Fei Zhou, Cheng-Chung Chu | 2024-10-22 |
| 12096636 | Semiconductor device containing bit lines separated by air gaps and methods for forming the same | Adarsh Rajashekhar, Rahul Sharangpani, Fei Zhou | 2024-09-17 |
| 12087628 | High aspect ratio via fill process employing selective metal deposition and structures formed by the same | Rahul Sharangpani, Fumitaka Amano | 2024-09-10 |
| 12035535 | Three-dimensional NOR array including vertical word lines and discrete memory elements and methods of manufacture | Adarsh Rajashekhar, Rahul Sharangpani | 2024-07-09 |
| 12010841 | Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings | Monica Titus, Senaka Kanakamedala, Rahul Sharangpani, Yao-Sheng Lee | 2024-06-11 |
| 11996462 | Ferroelectric field effect transistors having enhanced memory window and methods of making the same | Bhagwati Prasad, Joyeeta Nag, Seung-Yeul Yang, Adarsh Rajashekhar | 2024-05-28 |
| 11990413 | Three-dimensional memory device including aluminum alloy word lines and method of making the same | Linghan Chen, Fumitaka Amano | 2024-05-21 |
| 11984395 | Semiconductor device containing bit lines separated by air gaps and methods for forming the same | Adarsh Rajashekhar, Rahul Sharangpani, Fei Zhou | 2024-05-14 |
| 11972954 | Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings | Roshan Jayakhar TIRUKKONDA, Senaka Kanakamedala, Rahul Sharangpani, Monica Titus | 2024-04-30 |
| 11973123 | Ferroelectric devices including a single crystalline ferroelectric layer and method of making the same | Adarsh Rajashekhar, Kartik SONDHI | 2024-04-30 |
| 11968826 | Three-dimensional memory device with metal-barrier-metal word lines and methods of making the same | Ramy Nashed Bassely Said, Senaka Kanakamedala, Rahul Sharangpani | 2024-04-23 |
| 11968834 | Three-dimensional memory device including discrete charge storage elements with laterally-protruding profiles and methods of making thereof | Ramy Nashed Bassely Said, Senaka Kanakamedala, Fei Zhou | 2024-04-23 |
| 11948902 | Bonded assembly including an airgap containing bonding-level dielectric layer and methods of forming the same | Lin Hou, Peter Rabkin, Adarsh Rajashekhar, Masaaki Higashitani | 2024-04-02 |
| 11903218 | Bonded memory devices and methods of making the same | Johann Alsmeier | 2024-02-13 |
| 11877446 | Three-dimensional memory device with electrically conductive layers containing vertical tubular liners and methods for forming the same | Rahul Sharangpani, Fei Zhou, Adarsh Rajashekhar | 2024-01-16 |