Issued Patents 2024
Showing 1–25 of 28 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12176032 | Word line dependent pass voltage ramp rate to improve performance of NAND memory | Abu Naser Zainuddin, Towhidur Razzak | 2024-12-24 |
| 12160989 | Three-dimensional memory device including an isolation-trench etch stop layer and methods for forming the same | Ramy Nashed Bassely Said, Raghuveer S. Makala, Senaka Kanakamedala | 2024-12-03 |
| 12154630 | Non-volatile memory with tuning of erase process | Yi Song, Yanjie Wang | 2024-11-26 |
| 12153801 | Non-volatile memory with optimized operation sequence | Yihang Liu, Xiaochen Zhu, Jie Liu, Sarath Puthenthermadam, Feng Gao | 2024-11-26 |
| 12147695 | Non-volatile memory with adapting erase process | Longju Liu, Yi Song, Sarath Puthenthermadam | 2024-11-19 |
| 12148489 | Early detection of programming failure for non-volatile memory | Yi Song, Sarath Puthenthermadam | 2024-11-19 |
| 12119065 | Non-volatile memory with zoned control for limiting programming for different groups of non-volatile memory cells | Xiaochen Zhu, Lito De La Rama, Yi Song, Jiacen Guo | 2024-10-15 |
| 12105963 | NAND string read voltage adjustment | Yi Song, Yanjie Wang | 2024-10-01 |
| 12100461 | Non-volatile memory with suspension period during programming | Yi Song, Jiacen Guo | 2024-09-24 |
| 12099728 | Non-volatile memory with programmable resistance non-data word line | Towhidur Razzak, Ravi Kumar, Abu Naser Zainuddin | 2024-09-24 |
| 12094546 | Non-volatile memory with zone based program speed adjustment | Yi Song, Yanjie Wang | 2024-09-17 |
| 12094537 | Non-volatile memory with differential temperature compensation for super page programming | Yi Song, Dengtao Zhao, Sarath Puthenthermadam | 2024-09-17 |
| 12057157 | Low power mode with read sequence adjustment | Kai Kirk, Yu-Chung Lien | 2024-08-06 |
| 12057175 | Memory apparatus and method of operation using state dependent strobe tier scan to reduce peak ICC | Chin-Yi Chen, Muhammad Masuduzzaman, Kou Tei, Deepanshu Dutta, Hiroyuki Mizukoshi +1 more | 2024-08-06 |
| 12051468 | Soft erase process during programming of non-volatile memory | Deepanshu Dutta | 2024-07-30 |
| 12046314 | NAND memory with different pass voltage ramp rates for binary and multi-state memory | Abu Naser Zainuddin, Dong-Il Moon | 2024-07-23 |
| 11972803 | Word line zone dependent pre-charge voltage | Yu-Chung Lien, Fanqi Wu | 2024-04-30 |
| 11972814 | Verify techniques for current reduction in a memory device | Xue Bai Pitner, Yu-Chung Lien, Ravi Kumar, Bo Lei, Zhenni Wan | 2024-04-30 |
| 11972812 | Non-volatile memory with data refresh based on data states of adjacent memory cells | Yi Song, Jun Wan, Deepanshu Dutta | 2024-04-30 |
| 11972805 | Non-volatile memory with narrow and shallow erase | Yi Song, Yanjie Wang | 2024-04-30 |
| 11967388 | Stress test for grown bad blocks | Sarath Puthenthermadam, Longju Liu, Parth Amin, Sujjatul Islam | 2024-04-23 |
| 11961563 | Balancing peak power with programming speed in non-volatile memory | Towhidur Razzak, Deepanshu Dutta | 2024-04-16 |
| 11955184 | Memory cell group read with compensation for different programming speeds | Jiacen Guo, Xiaochen Zhu, Xiang Yang, Lito De La Rama, Yi Song | 2024-04-09 |
| 11935593 | Dummy cell resistance tuning in NAND strings | Yi Song, Xiang Yang | 2024-03-19 |
| 11894071 | Non-volatile memory with differential temperature compensation for bulk programming | Yi Song, Dengtao Zhao, Sarath Puthenthermadam | 2024-02-06 |