Issued Patents 2024
Showing 1–4 of 4 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12176032 | Word line dependent pass voltage ramp rate to improve performance of NAND memory | Jiahui Yuan, Towhidur Razzak | 2024-12-24 |
| 12099728 | Non-volatile memory with programmable resistance non-data word line | Towhidur Razzak, Ravi Kumar, Jiahui Yuan | 2024-09-24 |
| 12046314 | NAND memory with different pass voltage ramp rates for binary and multi-state memory | Jiahui Yuan, Dong-Il Moon | 2024-07-23 |
| 11875043 | Loop dependent word line ramp start time for program verify of multi-level NAND memory | Jiahui Yuan, Toru Miwa | 2024-01-16 |