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Variable programming clocks during a multi- stage programming operation in a NAND memory device |
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Non-volatile memory with programmable resistance non-data word line |
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| 12046306 |
Temperature dependent programming techniques in a memory device |
Sujjatul Islam |
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Location dependent sense time offset parameter for improvement to the threshold voltage distribution margin in non-volatile memory structures |
Xue Bai Pitner, Prafful Golani |
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Selective inhibit bitline voltage to cells with worse program disturb |
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| 11972814 |
Verify techniques for current reduction in a memory device |
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