RD

Rajeev Kumar Dokania

KC Kepler Computing: 79 patents #3 of 35Top 9%
📍 Beaverton, OR: #1 of 500 inventorsTop 1%
🗺 Oregon: #3 of 4,197 inventorsTop 1%
Overall (2023): #121 of 537,848Top 1%
81
Patents 2023

Issued Patents 2023

Showing 51–75 of 81 patents

Patent #TitleCo-InventorsDate
11716086 Asynchronous circuit with majority gate or minority gate logic and 1-input threshold gate Sasikanth Manipatruni, Nabil Imam, Ikenna Odinaka, Rafael Rios, Amrita Mathuriya 2023-08-01
11716085 Pull-up and pull-down networks controlled asynchronously by threshold gate logic Sasikanth Manipatruni, Nabil Imam, Ikenna Odinaka, Rafael Rios, Amrita Mathuriya 2023-08-01
11716084 Pull-up and pull-down networks controlled asynchronously by majority gate or minority gate logic Sasikanth Manipatruni, Nabil Imam, Ikenna Odinaka, Rafael Rios, Amrita Mathuriya 2023-08-01
11711083 Majority gate based low power ferroelectric based adder with reset mechanism Sasikanth Manipatruni, Yuan-Sheng Fang, Robert Menezes, Guarav Thareja, Ramamoorthy Ramesh +1 more 2023-07-25
11705905 Multi-function ferroelectric threshold gate with input based adaptive threshold Amrita Mathuriya, Rafael Rios, Ikenna Odinaka, Sasikanth Manipatruni 2023-07-18
11705906 Majority logic gate having ferroelectric input capacitors and a pulsing scheme coupled to a conditioning logic Amrita Mathuriya, Rafael Rios, Ikenna Odinaka, Robert Menezes, Ramamoorthy Ramesh +1 more 2023-07-18
11699699 Multi-function threshold gate with adaptive threshold and stacked planar ferroelectric capacitors Amrita Mathuriya, Rafael Rios, Ikenna Odinaka, Debo Olaosebikan, Sasikanth Manipatruni 2023-07-11
11694940 3D stack of accelerator die and multi-core processor die Amrita Mathuriya, Christopher B. Wilkerson, Debo Olaosebikan, Sasikanth Manipatruni 2023-07-04
11696451 Common mode compensation for non-linear polar material based 1T1C memory bit-cell Noriyuki Sato, Tanay Gosavi, Amrita Mathuriya, Sasikanth Manipatruni 2023-07-04
11696450 Common mode compensation for multi-element non-linear polar material based gain memory bit-cell Noriyuki Sato, Tanay Gosavi, Amrita Mathuriya, Sasikanth Manipatruni 2023-07-04
11694737 Write scheme for multi-element gain ferroelectric memory bit-cell with plate-line parallel to word-line to minimize write disturb effects Amrita Mathuriya, Sasikanth Manipatruni 2023-07-04
11688733 Method of adjusting threshold of a paraelectric capacitive-input circuit Amrita Mathuriya, Rafael Rios, Ikenna Odinaka, Sasikanth Manipatruni 2023-06-27
11670352 Apparatus and method for endurance of non-volatile memory banks via wear leveling and outlier compensation Christopher B. Wilkerson, Sasikanth Manipatruni, Amrita Mathuriya 2023-06-06
11664060 Writing scheme for multi-element gain ferroelectric memory bit-cell with plate-lines parallel to a bit-line and with individual switches on the plate-lines of the bit-cell Amrita Mathuriya, Sasikanth Manipatruni 2023-05-30
11664371 Multi-function threshold gate with adaptive threshold and stacked planar paraelectric capacitors Amrita Mathuriya, Rafael Rios, Ikenna Odinaka, Debo Olaosebikan, Sasikanth Manipatruni 2023-05-30
11664370 Multi-function paraelectric threshold gate with input based adaptive threshold Amrita Mathuriya, Rafael Rios, Ikenna Odinaka, Sasikanth Manipatruni 2023-05-30
11658664 Asynchronous circuit with majority gate or minority gate logic Sasikanth Manipatruni, Nabil Imam, Ikenna Odinaka, Rafael Rios, Amrita Mathuriya 2023-05-23
11652482 Parallel pull-up and pull-down networks controlled asynchronously by threshold logic gate Sasikanth Manipatruni, Nabil Imam, Ikenna Odinaka, Rafael Rios, Amrita Mathuriya 2023-05-16
11652487 Parallel pull-up and pull-down networks controlled asynchronously by majority gate or minority gate logic Sasikanth Manipatruni, Nabil Imam, Ikenna Odinaka, Rafael Rios, Amrita Mathuriya 2023-05-16
11646071 Reading scheme for multi-element gain ferroelectric memory bit-cell with plate-line parallel to bit-line and with individual switches and control on plate-lines of the bit-cell Amrita Mathuriya, Sasikanth Manipatruni 2023-05-09
11641747 Integration of a ferroelectric memory device with a transistor Gaurav Thareja, Sasikanth Manipatruni, Ramamoorthy Ramesh, Amrita Mathuriya 2023-05-02
11641205 Reset mechanism for a chain of majority or minority gates having paraelectric material Amrita Mathuriya, Rafael Rios, Ikenna Odinaka, Sasikanth Manipatruni 2023-05-02
11637090 Method of forming a 3D stacked compute and memory Sasikanth Manipatruni, Amrita Mathuriya, Ramamoorthy Ramesh 2023-04-25
11616507 Ferroelectric based latch Sasikanth Manipatruni, Yuan-Sheng Fang, Robert Menezes, Ramamoorthy Ramesh, Amrita Mathuriya 2023-03-28
11610620 Pulsing scheme for a 1TNC ferroelectric memory bit-cell with plate-line parallel to bit-line to minimize read or write disturb effects Amrita Mathuriya, Sasikanth Manipatruni 2023-03-21