Issued Patents 2022
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11538828 | Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same | Ashish Baraskar, Raghuveer S. Makala | 2022-12-27 |
| 11508748 | Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same | Ashish Baraskar, Raghuveer S. Makala | 2022-11-22 |
| 11508654 | Non-volatile memory with capacitors using metal under signal line or above a device capacitor | Luisa Lin, Mohan Dunga, Venkatesh Ramachandra, Masaaki Higashitani | 2022-11-22 |
| 11495613 | Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same | Ashish Baraskar, Raghuveer S. Makala | 2022-11-08 |
| 11476272 | Three-dimensional memory device with a graphene channel and methods of making the same | Masaaki Higashitani | 2022-10-18 |
| 11444016 | Non-volatile memory with capacitors using metal under signal line or above a device capacitor | Luisa Lin, Mohan Dunga, Venkatesh Ramachandra, Masaaki Higashitani | 2022-09-13 |
| 11430745 | Semiconductor die containing silicon nitride stress compensating regions and method for making the same | Chen Wu, Yangyin Chen, Masaaki Higashitani | 2022-08-30 |
| 11424215 | Bonded assembly formed by hybrid wafer bonding using selectively deposited metal liners | Lin Hou, Yangyin Chen, Masaaki Higashitani | 2022-08-23 |
| 11404123 | Non-volatile memory with multiple wells for word line switch transistors | Shiqian Shao, Fumiaki Toyama, Yuki Mizutani, Mohan Dunga | 2022-08-02 |
| 11398451 | Methods for reusing substrates during manufacture of a bonded assembly including a logic die and a memory die | Ashish Baraskar, Raghuveer S. Makala | 2022-07-26 |
| 11374020 | Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same | Ashish Baraskar, Raghuveer S. Makala | 2022-06-28 |
| 11362079 | Bonded die assembly containing a manganese-containing oxide bonding layer and methods for making the same | Chen Wu, Masaaki Higashitani | 2022-06-14 |
| 11348901 | Interfacial tilt-resistant bonded assembly and methods for forming the same | Lin Hou, Yangyin Chen, Masaaki Higashitani | 2022-05-31 |
| 11335790 | Ferroelectric memory devices with dual dielectric confinement and methods of forming the same | Masaaki Higashitani | 2022-05-17 |
| 11322509 | Three-dimensional memory device including a silicon-germanium source contact layer and method of making the same | Ashish Baraskar, Raghuveer S. Makala | 2022-05-03 |
| 11302713 | Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same | Ashish Baraskar, Raghuveer S. Makala | 2022-04-12 |
| 11296113 | Three-dimensional memory device with vertical field effect transistors and method of making thereof | Kwang Ho Kim | 2022-04-05 |
| 11282857 | Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same | Ashish Baraskar, Raghuveer S. Makala | 2022-03-22 |
| 11276705 | Embedded bonded assembly and method for making the same | Chen Wu, Yangyin Chen, Masaaki Higashitani | 2022-03-15 |
| 11270963 | Bonding pads including interfacial electromigration barrier layers and methods of making the same | Chen Wu, Masaaki Higashitani | 2022-03-08 |
| 11239204 | Bonded assembly containing laterally bonded bonding pads and methods of forming the same | Chen Wu, Yangyin Chen, Masaaki Higashitani | 2022-02-01 |