| 11538828 |
Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same |
Ashish Baraskar, Raghuveer S. Makala |
2022-12-27 |
| 11508748 |
Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same |
Ashish Baraskar, Raghuveer S. Makala |
2022-11-22 |
| 11508654 |
Non-volatile memory with capacitors using metal under signal line or above a device capacitor |
Luisa Lin, Mohan Dunga, Venkatesh Ramachandra, Masaaki Higashitani |
2022-11-22 |
| 11495613 |
Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same |
Ashish Baraskar, Raghuveer S. Makala |
2022-11-08 |
| 11476272 |
Three-dimensional memory device with a graphene channel and methods of making the same |
Masaaki Higashitani |
2022-10-18 |
| 11444016 |
Non-volatile memory with capacitors using metal under signal line or above a device capacitor |
Luisa Lin, Mohan Dunga, Venkatesh Ramachandra, Masaaki Higashitani |
2022-09-13 |
| 11430745 |
Semiconductor die containing silicon nitride stress compensating regions and method for making the same |
Chen Wu, Yangyin Chen, Masaaki Higashitani |
2022-08-30 |
| 11424215 |
Bonded assembly formed by hybrid wafer bonding using selectively deposited metal liners |
Lin Hou, Yangyin Chen, Masaaki Higashitani |
2022-08-23 |
| 11404123 |
Non-volatile memory with multiple wells for word line switch transistors |
Shiqian Shao, Fumiaki Toyama, Yuki Mizutani, Mohan Dunga |
2022-08-02 |
| 11398451 |
Methods for reusing substrates during manufacture of a bonded assembly including a logic die and a memory die |
Ashish Baraskar, Raghuveer S. Makala |
2022-07-26 |
| 11374020 |
Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same |
Ashish Baraskar, Raghuveer S. Makala |
2022-06-28 |
| 11362079 |
Bonded die assembly containing a manganese-containing oxide bonding layer and methods for making the same |
Chen Wu, Masaaki Higashitani |
2022-06-14 |
| 11348901 |
Interfacial tilt-resistant bonded assembly and methods for forming the same |
Lin Hou, Yangyin Chen, Masaaki Higashitani |
2022-05-31 |
| 11335790 |
Ferroelectric memory devices with dual dielectric confinement and methods of forming the same |
Masaaki Higashitani |
2022-05-17 |
| 11322509 |
Three-dimensional memory device including a silicon-germanium source contact layer and method of making the same |
Ashish Baraskar, Raghuveer S. Makala |
2022-05-03 |
| 11302713 |
Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same |
Ashish Baraskar, Raghuveer S. Makala |
2022-04-12 |
| 11296113 |
Three-dimensional memory device with vertical field effect transistors and method of making thereof |
Kwang Ho Kim |
2022-04-05 |
| 11282857 |
Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same |
Ashish Baraskar, Raghuveer S. Makala |
2022-03-22 |
| 11276705 |
Embedded bonded assembly and method for making the same |
Chen Wu, Yangyin Chen, Masaaki Higashitani |
2022-03-15 |
| 11270963 |
Bonding pads including interfacial electromigration barrier layers and methods of making the same |
Chen Wu, Masaaki Higashitani |
2022-03-08 |
| 11239204 |
Bonded assembly containing laterally bonded bonding pads and methods of forming the same |
Chen Wu, Yangyin Chen, Masaaki Higashitani |
2022-02-01 |