Issued Patents 2022
Showing 1–25 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11538828 | Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same | Ashish Baraskar, Peter Rabkin | 2022-12-27 |
| 11538817 | Bonded memory devices and methods of making the same | Johann Alsmeier | 2022-12-27 |
| 11527500 | Semiconductor structure containing multilayer bonding pads and methods of forming the same | Rahul Sharangpani, Fei Zhou, Adarsh Rajashekhar | 2022-12-13 |
| 11521984 | Three-dimensional memory device containing low resistance source-level contact and method of making thereof | Rahul Sharangpani, Fei Zhou, Adarsh Rajashekhar | 2022-12-06 |
| 11515250 | Three dimensional semiconductor device containing composite contact via structures and methods of making the same | Monica Titus, Ramy Nashed Bassely Said, Rahul Sharangpani, Senaka Kanakamedala | 2022-11-29 |
| 11515273 | Bonded assembly containing oxidation barriers, hybrid bonding, or air gap, and methods of forming the same | Ramy Nashed Bassely Said, Senaka Kanakamedala | 2022-11-29 |
| 11508748 | Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same | Ashish Baraskar, Peter Rabkin | 2022-11-22 |
| 11495613 | Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same | Ashish Baraskar, Peter Rabkin | 2022-11-08 |
| 11482539 | Three-dimensional memory device including metal silicide source regions and methods for forming the same | Rahul Sharangpani, Fei Zhou, Adarsh Rajashekhar | 2022-10-25 |
| 11482531 | Three-dimensional memory device including multi-bit charge storage elements and methods for forming the same | Ramy Nashed Bassely Said, Jiahui Yuan, Senaka Kanakamedala, Dana Lee | 2022-10-25 |
| 11469241 | Three-dimensional memory device including discrete charge storage elements and methods of forming the same | Senaka Kanakamedala, Fei Zhou, Yao-Sheng Lee | 2022-10-11 |
| 11450687 | Multibit ferroelectric memory cells and methods for forming the same | Roshan Jayakhar TIRUKKONDA, Ramy Nashed Bassely Said, Senaka Kanakamedala, Rahul Sharangpani, Adarsh Rajashekhar +1 more | 2022-09-20 |
| 11437270 | Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same | Rahul Sharangpani, Fei Zhou, Adarsh Rajashekhar, Senaka Kanakamedala, Fumitaka Amano +1 more | 2022-09-06 |
| 11430736 | Semiconductor device including having metal organic framework interlayer dielectric layer between metal lines and methods of forming the same | Ramy Nashed Bassely Said, Senaka Kanakamedala, Yao-Sheng Lee | 2022-08-30 |
| 11424231 | Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same | Adarsh Rajashekhar, Fei Zhou | 2022-08-23 |
| 11424265 | Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same | Adarsh Rajashekhar, Fei Zhou, Rahul Sharangpani | 2022-08-23 |
| 11398451 | Methods for reusing substrates during manufacture of a bonded assembly including a logic die and a memory die | Ashish Baraskar, Peter Rabkin | 2022-07-26 |
| 11393780 | Bonded assembly containing oxidation barriers, hybrid bonding, or air gap, and methods of forming the same | Ramy Nashed Bassely Said, Senaka Kanakamedala | 2022-07-19 |
| 11387244 | Three-dimensional memory device including discrete charge storage elements and methods of forming the same | Senaka Kanakamedala, Fei Zhou, Yao-Sheng Lee | 2022-07-12 |
| 11387250 | Three-dimensional memory device containing metal-organic framework inter-word line insulating layers | Ramy Nashed Bassely Said, Senaka Kanakamedala, Fei Zhou, Yao-Sheng Lee | 2022-07-12 |
| 11377733 | Fluorine-free tungsten deposition process employing in-situ oxidation and apparatuses for effecting the same | Fei Zhou, Rahul Sharangpani, Yusuke Mukae, Naoki Takeguchi | 2022-07-05 |
| 11374020 | Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same | Ashish Baraskar, Peter Rabkin | 2022-06-28 |
| 11322509 | Three-dimensional memory device including a silicon-germanium source contact layer and method of making the same | Ashish Baraskar, Peter Rabkin | 2022-05-03 |
| 11309301 | Stacked die assembly including double-sided inter-die bonding connections and methods of forming the same | Fei Zhou, Rahul Sharangpani, Adarsh Rajashekhar | 2022-04-19 |
| 11309332 | Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal-containing conductive elements and method of making thereof | Adarsh Rajashekhar, Rahul Sharangpani, Seung-Yeul Yang, Fei Zhou | 2022-04-19 |