Issued Patents 2022
Showing 26–36 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11302716 | Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same | Yanli Zhang, Fei Zhou, Rahul Sharangpani, Adarsh Rajashekhar, Seung-Yeul Yang | 2022-04-12 |
| 11302713 | Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same | Ashish Baraskar, Peter Rabkin | 2022-04-12 |
| 11296101 | Three-dimensional memory device including an inter-tier etch stop layer and method of making the same | Yao-Sheng Lee, Senaka Kanakamedala, Johann Alsmeier | 2022-04-05 |
| 11296028 | Semiconductor device containing metal-organic framework inter-line insulator structures and methods of manufacturing the same | Ramy Nashed Bassely Said, Senaka Kanakamedala, Fei Zhou, Yao-Sheng Lee | 2022-04-05 |
| 11282857 | Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same | Ashish Baraskar, Peter Rabkin | 2022-03-22 |
| 11282848 | Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same | Yanli Zhang, Fei Zhou, Rahul Sharangpani, Adarsh Rajashekhar, Seung-Yeul Yang | 2022-03-22 |
| 11244958 | Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the same | Zhixin Cui, Fei Zhou | 2022-02-08 |
| 11244953 | Three-dimensional memory device including molybdenum word lines and metal oxide spacers and method of making the same | Senaka Kanakamedala, Yao-Sheng Lee | 2022-02-08 |
| 11239253 | Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same | Adarsh Rajashekhar, Fei Zhou | 2022-02-01 |
| 11239254 | Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same | Rahul Sharangpani, Adarsh Rajashekhar, Fei Zhou, Seung-Yeul Yang | 2022-02-01 |
| 11217532 | Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same | Rahul Sharangpani, Fei Zhou, Adarsh Rajashekhar, Tatsuya Hinoue, Tomoyuki Obu +2 more | 2022-01-04 |