Issued Patents 2022
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11527500 | Semiconductor structure containing multilayer bonding pads and methods of forming the same | Raghuveer S. Makala, Fei Zhou, Adarsh Rajashekhar | 2022-12-13 |
| 11521984 | Three-dimensional memory device containing low resistance source-level contact and method of making thereof | Raghuveer S. Makala, Fei Zhou, Adarsh Rajashekhar | 2022-12-06 |
| 11515250 | Three dimensional semiconductor device containing composite contact via structures and methods of making the same | Monica Titus, Ramy Nashed Bassely Said, Senaka Kanakamedala, Raghuveer S. Makala | 2022-11-29 |
| 11502104 | Antiferroelectric memory devices and methods of making the same | Bhagwati Prasad | 2022-11-15 |
| 11482539 | Three-dimensional memory device including metal silicide source regions and methods for forming the same | Raghuveer S. Makala, Fei Zhou, Adarsh Rajashekhar | 2022-10-25 |
| 11450687 | Multibit ferroelectric memory cells and methods for forming the same | Roshan Jayakhar TIRUKKONDA, Ramy Nashed Bassely Said, Senaka Kanakamedala, Raghuveer S. Makala, Adarsh Rajashekhar +1 more | 2022-09-20 |
| 11437270 | Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same | Raghuveer S. Makala, Fei Zhou, Adarsh Rajashekhar, Senaka Kanakamedala, Fumitaka Amano +1 more | 2022-09-06 |
| 11430813 | Antiferroelectric memory devices and methods of making the same | Bhagwati Prasad | 2022-08-30 |
| 11424265 | Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same | Adarsh Rajashekhar, Raghuveer S. Makala, Fei Zhou | 2022-08-23 |
| 11377733 | Fluorine-free tungsten deposition process employing in-situ oxidation and apparatuses for effecting the same | Fei Zhou, Raghuveer S. Makala, Yusuke Mukae, Naoki Takeguchi | 2022-07-05 |
| 11309332 | Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal-containing conductive elements and method of making thereof | Adarsh Rajashekhar, Raghuveer S. Makala, Seung-Yeul Yang, Fei Zhou | 2022-04-19 |
| 11309301 | Stacked die assembly including double-sided inter-die bonding connections and methods of forming the same | Fei Zhou, Raghuveer S. Makala, Adarsh Rajashekhar | 2022-04-19 |
| 11302716 | Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same | Raghuveer S. Makala, Yanli Zhang, Fei Zhou, Adarsh Rajashekhar, Seung-Yeul Yang | 2022-04-12 |
| 11282848 | Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same | Raghuveer S. Makala, Yanli Zhang, Fei Zhou, Adarsh Rajashekhar, Seung-Yeul Yang | 2022-03-22 |
| 11239254 | Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same | Adarsh Rajashekhar, Raghuveer S. Makala, Fei Zhou, Seung-Yeul Yang | 2022-02-01 |
| 11217532 | Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same | Raghuveer S. Makala, Fei Zhou, Adarsh Rajashekhar, Tatsuya Hinoue, Tomoyuki Obu +2 more | 2022-01-04 |