Issued Patents 2022
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11515250 | Three dimensional semiconductor device containing composite contact via structures and methods of making the same | Monica Titus, Ramy Nashed Bassely Said, Rahul Sharangpani, Raghuveer S. Makala | 2022-11-29 |
| 11515273 | Bonded assembly containing oxidation barriers, hybrid bonding, or air gap, and methods of forming the same | Ramy Nashed Bassely Said, Raghuveer S. Makala | 2022-11-29 |
| 11489043 | Three-dimensional memory device employing thinned insulating layers and methods for forming the same | James Kai, Johann Alsmeier | 2022-11-01 |
| 11482531 | Three-dimensional memory device including multi-bit charge storage elements and methods for forming the same | Ramy Nashed Bassely Said, Jiahui Yuan, Raghuveer S. Makala, Dana Lee | 2022-10-25 |
| 11469241 | Three-dimensional memory device including discrete charge storage elements and methods of forming the same | Raghuveer S. Makala, Fei Zhou, Yao-Sheng Lee | 2022-10-11 |
| 11450687 | Multibit ferroelectric memory cells and methods for forming the same | Roshan Jayakhar TIRUKKONDA, Ramy Nashed Bassely Said, Rahul Sharangpani, Raghuveer S. Makala, Adarsh Rajashekhar +1 more | 2022-09-20 |
| 11437270 | Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same | Rahul Sharangpani, Raghuveer S. Makala, Fei Zhou, Adarsh Rajashekhar, Fumitaka Amano +1 more | 2022-09-06 |
| 11430736 | Semiconductor device including having metal organic framework interlayer dielectric layer between metal lines and methods of forming the same | Ramy Nashed Bassely Said, Raghuveer S. Makala, Yao-Sheng Lee | 2022-08-30 |
| 11398496 | Three-dimensional memory device employing thinned insulating layers and methods for forming the same | James Kai, Johann Alsmeier | 2022-07-26 |
| 11393780 | Bonded assembly containing oxidation barriers, hybrid bonding, or air gap, and methods of forming the same | Ramy Nashed Bassely Said, Raghuveer S. Makala | 2022-07-19 |
| 11387250 | Three-dimensional memory device containing metal-organic framework inter-word line insulating layers | Ramy Nashed Bassely Said, Fei Zhou, Raghuveer S. Makala, Yao-Sheng Lee | 2022-07-12 |
| 11387244 | Three-dimensional memory device including discrete charge storage elements and methods of forming the same | Raghuveer S. Makala, Fei Zhou, Yao-Sheng Lee | 2022-07-12 |
| 11296028 | Semiconductor device containing metal-organic framework inter-line insulator structures and methods of manufacturing the same | Ramy Nashed Bassely Said, Fei Zhou, Raghuveer S. Makala, Yao-Sheng Lee | 2022-04-05 |
| 11296101 | Three-dimensional memory device including an inter-tier etch stop layer and method of making the same | Yao-Sheng Lee, Raghuveer S. Makala, Johann Alsmeier | 2022-04-05 |
| 11244953 | Three-dimensional memory device including molybdenum word lines and metal oxide spacers and method of making the same | Raghuveer S. Makala, Yao-Sheng Lee | 2022-02-08 |