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Embedded memory devices |
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| 11462583 |
Embedding magneto-resistive random-access memory devices between metal levels |
Ashim Dutta, Chih-Chao Yang, Daniel C. Edelstein, John C. Arnold |
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Electrode-via structure |
Chih-Chao Yang, Daniel C. Edelstein |
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| 11257717 |
Selective recessing to form a fully aligned via |
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| 11244907 |
Metal surface preparation for increased alignment contrast |
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Embedded BEOL memory device with top electrode pillar |
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| 11239278 |
Bottom conductive structure with a limited top contact area |
Chih-Chao Yang, Baozhen Li, Koichi Motoyama |
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| 11223008 |
Pillar-based memory hardmask smoothing and stress reduction |
Michael Rizzolo, Ashim Dutta, Dominik Metzler |
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| 11217742 |
Bottom electrode for semiconductor memory device |
Chih-Chao Yang, Daniel C. Edelstein |
2022-01-04 |
