Issued Patents 2022
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11527647 | Field effect transistor (FET) devices | Takashi Ando, Cheng Chi, Praneet Adusumilli | 2022-12-13 |
| 11502252 | Resistive switching memory cell | Takashi Ando, Praneet Adusumilli, Cheng Chi | 2022-11-15 |
| 11481611 | RRAM crossbar array structure for multi-task learning | Takashi Ando, Hari V. Mallela | 2022-10-25 |
| 11456416 | Resistive switching memory cell | Praneet Adusumilli, Takashi Ando, Cheng Chi | 2022-09-27 |
| 11430954 | Resistance drift mitigation in non-volatile memory cell | Praneet Adusumilli, Anirban Chandra, Takashi Ando, Cheng Chi | 2022-08-30 |
| 11424362 | NCFETS with complimentary capacitance matching using stacked n-type and p-type nanosheets | Takashi Ando, Cheng Chi, Praneet Adusumilli | 2022-08-23 |
| 11342446 | Nanosheet field effect transistors with partial inside spacers | Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Rajasekhar Venigalla | 2022-05-24 |
| 11335730 | Vertical resistive memory device with embedded selectors | Takashi Ando, Praneet Adusumilli, Cheng Chi | 2022-05-17 |
| 11289573 | Contact resistance reduction in nanosheet device structure | Heng Wu, Dechao Guo, Ruqiang Bao, Junli Wang, Lan Yu +1 more | 2022-03-29 |
| 11244864 | Reducing parasitic capacitance within semiconductor devices | Ruilong Xie, Alexander Reznicek, Kangguo Cheng | 2022-02-08 |
| 11245020 | Gate-all-around field effect transistor having multiple threshold voltages | Ruqiang Bao, Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Tenko Yamashita | 2022-02-08 |