Issued Patents 2022
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11508903 | Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance | Angeline Smith, Ian A. Young, Kaan Oguz, Sasikanth Manipatruni, Christopher J. Wiegand +4 more | 2022-11-22 |
| 11476412 | Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory | Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Noriyuki Sato, Benjamin Buford +4 more | 2022-10-18 |
| 11462678 | Perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal stability and methods to form the same | Kaan Oguz, Charles C. Kuo, Mark L. Doczy, Noriyuki Sato | 2022-10-04 |
| 11444237 | Spin orbit torque (SOT) memory devices and methods of fabrication | Noriyuki Sato, Tanay Gosavi, Gary Allen, Sasikanth Manipatruni, Kaan Oguz +5 more | 2022-09-13 |
| 11437567 | Perpendicular spin transfer torque magnetic mechanism | Justin S. Brockman, Christopher J. Wiegand, MD Tofizur Rahman, Daniel Ouelette, Angeline Smith +7 more | 2022-09-06 |
| 11430943 | Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) structure including a magnetic skyrmion | Kaan Oguz, Noriyuki Sato, Charles C. Kuo, Mark L. Doczy | 2022-08-30 |
| 11417830 | Magnetically doped spin orbit torque electrode for perpendicular magnetic random access memory | Tanay Gosavi, Sasikanth Manipatruni, Chia-Ching Lin, Gary Allen, Kaan Oguz +3 more | 2022-08-16 |
| 11404630 | Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form same | MD Tofizur Rahman, Christopher J. Wiegand, Kaan Oguz, Justin S. Brockman, Daniel G. Ouellette +5 more | 2022-08-02 |
| 11404482 | Self-aligned repeatedly stackable 3D vertical RRAM | Noriyuki Sato, Eungnak Han, Manish Chandhok, Gurpreet Singh, Nafees Kabir +4 more | 2022-08-02 |
| 11386951 | Multi-level magnetic tunnel junction (MTJ) devices including mobile magnetic skyrmions or ferromagnetic domains | Brian S. Doyle, Kaan Oguz, Noriyuki Sato, Charles C. Kuo, Mark L. Doczy | 2022-07-12 |
| 11374164 | Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memory | Tanay Gosavi, Sasikanth Manipatruni, Chia-Ching Lin, Kaan Oguz, Christopher J. Wiegand +5 more | 2022-06-28 |
| 11367749 | Spin orbit torque (SOT) memory devices and their methods of fabrication | Noriyuki Sato, Angeline Smith, Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz +7 more | 2022-06-21 |
| 11362263 | Spin orbit torque (SOT) memory devices and methods of fabrication | Noriyuki Sato, Tanay Gosavi, Justin S. Brockman, Sasikanth Manipatruni, Kaan Oguz +4 more | 2022-06-14 |
| 11348970 | Spin orbit torque (SOT) memory device with self-aligned contacts and their methods of fabrication | Benjamin Buford, Kaan Oguz, Noriyuki Sato, Charles C. Kuo, Mark L. Doczy | 2022-05-31 |
| 11295884 | Perpendicular STTM multi-layer insert free layer | Kaan Oguz, Brian S. Doyle, Charles C. Kuo, Mark L. Doczy | 2022-04-05 |
| 11276730 | Spin orbit torque memory devices and methods of fabrication | Christopher J. Wiegand, Tofizur Rahman, Noriyuki Sato, Gary Allen, James Pellegren +6 more | 2022-03-15 |
| 11257613 | Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication | Kaan Oguz, Tanay Gosavi, Sasikanth Manipatruni, Charles C. Kuo, Mark L. Doczy | 2022-02-22 |
| 11251365 | High blocking temperature spin orbit torque electrode | Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Ian A. Young, Gary Allen +1 more | 2022-02-15 |
| 11227644 | Self-aligned spin orbit torque (SOT) memory devices and their methods of fabrication | Noriyuki Sato, Kaan Oguz, Mark L. Doczy, Charles C. Kuo | 2022-01-18 |