Issued Patents 2020
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10879374 | Semiconductor device and manufacturing method thereof | Chih-Hao Yu, Sai-Hooi Yeong | 2020-12-29 |
| 10868151 | Conformal transfer doping method for fin-like field effect transistor | Sai-Hooi Yeong, Bo-Yu Lai, Ziwei Fang, Feng-Cheng Yang, Yen-Ming Chen | 2020-12-15 |
| 10868006 | FinFET transistor with fin back biasing | Tsung-Yao Wen, Sai-Hooi Yeong | 2020-12-15 |
| 10864612 | Polishing pad and method of using | Chunhung Chen, Jung-Yu Li, Shih-Sian HUANG | 2020-12-15 |
| 10811262 | Semiconductor device having a uniform and thin silicide layer on an epitaxial source/ drain structure and manufacturing method thereof | Kai-Hsuan Lee, Jyh-Cherng Sheu, Sung-Li Wang, Cheng-Yu Yang, Sai-Hooi Yeong | 2020-10-20 |
| 10686075 | Self-aligned gate hard mask and method forming same | Kai-Hsuan Lee, Bo-Yu Lai, Sai-Hooi Yeong, Yen-Ming Chen, Chi On Chui | 2020-06-16 |
| 10680084 | Epitaxial structures for fin-like field effect transistors | Chia-Ta Yu, Feng-Cheng Yang, Yen-Ming Chen, Sai-Hooi Yeong | 2020-06-09 |
| 10675732 | Apparatus and method for CMP pad conditioning | Chunhung Chen | 2020-06-09 |
| 10535569 | Forming transistor by selectively growing gate spacer | Kai-Hsuan Lee, Chia-Ta Yu, Cheng-Yu Yang, Bo-Yu Lai, Bo-Cyuan Lu +4 more | 2020-01-14 |
| 10529725 | Flexible merge scheme for source/drain epitaxy regions | Kai-Hsuan Lee, Chia-Ta Yu, Cheng-Yu Yang, Sai-Hooi Yeong, Feng-Cheng Yang +1 more | 2020-01-07 |
| 10529803 | Semiconductor device with epitaxial source/drain | Chia-Ta Yu, Wei-Yuan Lu, Chien-I Kuo, Li-Li Su, Feng-Cheng Yang +2 more | 2020-01-07 |