Issued Patents 2020
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10861753 | Air gap formation between gate spacer and epitaxy structure | Bo-Yu Lai, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen | 2020-12-08 |
| 10847634 | Field effect transistor and method of forming the same | Te-En Cheng, Chun Te Li, Tien-I Bao, Wei-Ken Lin | 2020-11-24 |
| 10833170 | Low-k gate spacer and methods for forming the same | Wen-Kai Lin, Bo-Yu Lai, Li Chun Te, Sai-Hooi Yeong, Tien-I Bao +1 more | 2020-11-10 |
| 10811262 | Semiconductor device having a uniform and thin silicide layer on an epitaxial source/ drain structure and manufacturing method thereof | Jyh-Cherng Sheu, Sung-Li Wang, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong | 2020-10-20 |
| 10777504 | Interconnect structure for semiconductor device and methods of fabrication thereof | Chia-Ta Yu, Yen-Ming Chen, Chi On Chui, Sai-Hooi Yeong | 2020-09-15 |
| 10686075 | Self-aligned gate hard mask and method forming same | Bo-Yu Lai, Sheng-Chen Wang, Sai-Hooi Yeong, Yen-Ming Chen, Chi On Chui | 2020-06-16 |
| 10535569 | Forming transistor by selectively growing gate spacer | Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Bo-Yu Lai, Bo-Cyuan Lu +4 more | 2020-01-14 |
| 10535525 | Method for forming semiconductor device structure | Chun-An Lin, Chun-Hsiung Lin, Sai-Hooi Yeong, Cheng-Yu Yang, Yen-Ting Chen | 2020-01-14 |
| 10529725 | Flexible merge scheme for source/drain epitaxy regions | Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong, Feng-Cheng Yang +1 more | 2020-01-07 |