Issued Patents 2020
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10879395 | Method for forming semiconductor device structure with cap layer | Feng-Ching Chu, Feng-Cheng Yang, Yen-Ming Chen | 2020-12-29 |
| 10872889 | Semiconductor component and fabricating method thereof | Ting-Yeh Chen, Han-Wei Wu, Feng-Cheng Yang | 2020-12-22 |
| 10868181 | Semiconductor structure with blocking layer and method for forming the same | Kun-Mu Li, Wen-Chu Hsiao | 2020-12-15 |
| 10868130 | Semiconductor device and method of manufacture | Yen-Ting Chen, Feng-Cheng Yang, Yen-Ming Chen | 2020-12-15 |
| 10867870 | Semiconductor device with funnel shape spacer and methods of forming the same | Cheng-Yu Yang, Yen-Ting Chen, Fu-Kai Yang, Yen-Ming Chen | 2020-12-15 |
| 10861749 | Using a metal-containing layer as an etching stop layer and to pattern source/drain regions of a FinFET | Yen-Ting Chen, Feng-Cheng Yang, Yen-Ming Chen | 2020-12-08 |
| 10861753 | Air gap formation between gate spacer and epitaxy structure | Bo-Yu Lai, Kai-Hsuan Lee, Feng-Cheng Yang, Yen-Ming Chen | 2020-12-08 |
| 10854726 | Integrated circuit with doped low-k sidewall spacers for gate stacks | Yen-Ting Chen, Feng-Cheng Yang, Yen-Ming Chen | 2020-12-01 |
| 10854615 | FinFET having non-merging epitaxially grown source/drains | Chun Po Chang, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang, Tzu-Hsiang Hsu | 2020-12-01 |
| 10770354 | Method of forming integrated circuit with low-k sidewall spacers for gate stacks | Yen-Ting Chen, Feng-Cheng Yang, Yen-Ming Chen | 2020-09-08 |
| 10756171 | Integrated circuit device with source/drain barrier | Feng-Ching Chu, Yen-Ming Chen, Feng-Cheng Yang | 2020-08-25 |
| 10748820 | Source/drain features with an etch stop layer | Feng-Ching Chu, Feng-Cheng Yang, Yen-Ming Chen | 2020-08-18 |
| 10741642 | Formation of dislocations in source and drain regions of finFET devices | Chun Hsiung Tsai, Wei-Yuan Lu, Chien-Tai Chan, Da-Wen Lin | 2020-08-11 |
| 10714619 | PMOS FinFET | Chia-Chun Lan, Chia-Ling Chan, Feng-Cheng Yang, Yen-Ming Chen | 2020-07-14 |
| 10629736 | Semiconductor structure and method for semiconductor device fabrication with improved source drain epitaxy | Tzu-Hsiang Hsu, Ting-Yeh Chen, Feng-Cheng Yang | 2020-04-21 |
| 10535757 | Structure of a fin field effect transistor (FinFET) | Chih-Shan Chen | 2020-01-14 |