Issued Patents 2020
Showing 1–25 of 28 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10879390 | Boosted vertical field-effect transistor | Injo Ok, Choonghyun Lee, Seyoung Kim | 2020-12-29 |
| 10840052 | Planar gate-insulated vacuum channel transistor | Injo Ok, Choonghyun Lee, Seyoung Kim | 2020-11-17 |
| 10833168 | Complementary metal-oxide-semiconductor (CMOS) nanosheet devices with epitaxial source/drains and replacement metal gate structures | Injo Ok, Choonghyun Lee | 2020-11-10 |
| 10832941 | Airgap isolation for backend embedded memory stack pillar arrays | Injo Ok, Alexander Reznicek, Choonghyun Lee | 2020-11-10 |
| 10818753 | VTFET having a V-shaped groove at the top junction region | Choonghyun Lee, Alexander Reznicek, Injo Ok | 2020-10-27 |
| 10804159 | Minimize middle-of-line contact line shorts | Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty | 2020-10-13 |
| 10804380 | Fin and shallow trench isolation replacement to prevent gate collapse | — | 2020-10-13 |
| 10804165 | Source and drain isolation for CMOS nanosheet with one block mask | Choonghyun Lee, Injo Ok | 2020-10-13 |
| 10790284 | Spacer for trench epitaxial structures | Injo Ok, Balasubramanian Pranatharthiharan, Charan V. V. S. Surisetty | 2020-09-29 |
| 10777679 | Removal of work function metal wing to improve device yield in vertical FETs | Choonghyun Lee, Injo Ok, Alexander Reznicek | 2020-09-15 |
| 10777648 | Vertical fin-type bipolar junction transistor with self-aligned base contact | Choonghyun Lee, Seyoung Kim, Injo Ok | 2020-09-15 |
| 10763431 | Film stress control for memory device stack | Injo Ok, Choonghyun Lee, Chih-Chao Yang, Seyoung Kim | 2020-09-01 |
| 10763326 | Middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stack | Injo Ok, Balasubramanian Pranatharthiharan, Charan V. V. S. Surisetty | 2020-09-01 |
| 10748962 | Method and structure for forming MRAM device | Seyoung Kim, Injo Ok, Choonghyun Lee, Kisup Chung | 2020-08-18 |
| 10741559 | Spacer for trench epitaxial structures | Injo Ok, Balasubramanian Pranatharthiharan, Charan V. V. S. Surisetty | 2020-08-11 |
| 10734490 | Bipolar junction transistor (BJT) with 3D wrap around emitter | Choonghyun Lee, Injo Ok, Shogo Mochizuki | 2020-08-04 |
| 10707332 | FinFET with epitaxial source and drain regions and dielectric isolated channel region | Kangguo Cheng, Ramachandra Divakaruni, Ali Khakifirooz, Alexander Reznicek | 2020-07-07 |
| 10693059 | MTJ stack etch using IBE to achieve vertical profile | Kisup Chung, Injo Ok, Seyoung Kim, Choonghyun Lee | 2020-06-23 |
| 10672643 | Reducing off-state leakage current in Si/SiGe dual channel CMOS | Injo Ok, Choonghyun Lee, Seyoung Kim | 2020-06-02 |
| 10672872 | Self-aligned base contacts for vertical fin-type bipolar junction transistors | Choonghyun Lee, Injo Ok, Seyoung Kim | 2020-06-02 |
| 10658495 | Vertical fin type bipolar junction transistor (BJT) device with a self-aligned base contact | Injo Ok, Choonghyun Lee, Sungjae Lee | 2020-05-19 |
| 10622259 | Semiconductor devices with sidewall spacers of equal thickness | Kangguo Cheng, Balasubramanian Pranatharthiharan | 2020-04-14 |
| 10608114 | Vertical nano-wire complimentary metal-oxide-semiconductor transistor with cylindrical III-V compound and germanium channel | Injo Ok, Choonghyun Lee | 2020-03-31 |
| 10600606 | Vertical vacuum channel transistor with minimized air gap between tip and gate | Injo Ok, Choonghyun Lee, Seyoung Kim | 2020-03-24 |
| 10593771 | Vertical fin-type bipolar junction transistor with self-aligned base contact | Choonghyun Lee, Seyoung Kim, Injo Ok | 2020-03-17 |