| 10804148 |
Buried contact to provide reduced VFET feature-to-feature tolerance requirements |
Su Chen Fan, Jeffrey C. Shearer, Ruilong Xie |
2020-10-13 |
| 10796957 |
Buried contact to provide reduced VFET feature-to-feature tolerance requirements |
Su Chen Fan, Jeffrey C. Shearer, Ruilong Xie |
2020-10-06 |
| 10755773 |
SRAM cell with dynamic split ground and split wordline |
— |
2020-08-25 |
| 10699775 |
SRAM cell with dynamic split ground and split wordline |
— |
2020-06-30 |
| 10629258 |
SRAM cell with dynamic split ground and split wordline |
— |
2020-04-21 |
| 10621295 |
Incorporation of process variation contours in design rule and risk estimation aspects of design for manufacturability to increase fabrication yield |
Jinning Liu, Jing Sha, Dongbing Shao |
2020-04-14 |
| 10614877 |
4T static random access memory bitcell retention |
Albert M. Chu, Myung-Hee Na, Sean D. Burns, Jens Haetty |
2020-04-07 |
| 10573528 |
Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic |
Fee Li Lie, Dongbing Shao, Yongan Xu |
2020-02-25 |
