Issued Patents 2020
Showing 26–40 of 40 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10600883 | Vertical transport FETs having a gradient threshold voltage | Choonghyun Lee, Takashi Ando, Pouya Hashemi, Alexander Reznicek | 2020-03-24 |
| 10593673 | Nanosheet with single epitaxial stack forming off-set dual material channels for gate-all-around CMOS | Xin Miao, Alexander Reznicek, Choonghyun Lee | 2020-03-17 |
| 10586872 | Formation of wrap-around-contact to reduce contact resistivity | Adra Carr, Choonghyun Lee, Takashi Ando, Pouya Hashemi | 2020-03-10 |
| 10580703 | Multivalent oxide cap for multiple work function gate stacks on high mobility channel materials | Takashi Ando, Choonghyun Lee, Pouya Hashemi | 2020-03-03 |
| 10573723 | Vertical transport FETs with asymmetric channel profiles using dipole layers | Takashi Ando, Choonghyun Lee, Sanghoon Shin, Pouya Hashemi, Alexander Reznicek | 2020-02-25 |
| 10566435 | Gate stack quality for gate-all-around field-effect transistors | Takashi Ando, Choonghyun Lee | 2020-02-18 |
| 10559692 | Nanosheet substrate isolation scheme by lattice matched wide bandgap semiconductor | Alexander Reznicek, Xin Miao, Choonghyun Lee | 2020-02-11 |
| 10559676 | Vertical FET with differential top spacer | Takashi Ando, Choonghyun Lee, Pouya Hashemi | 2020-02-11 |
| 10553679 | Formation of self-limited inner spacer for gate-all-around nanosheet FET | Takashi Ando, Choonghyun Lee, Alexander Reznicek, Pouya Hashemi | 2020-02-04 |
| 10553696 | Full air-gap spacers for gate-all-around nanosheet field effect transistors | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Alexander Reznicek | 2020-02-04 |
| 10553678 | Vertically stacked dual channel nanosheet devices | Choonghyun Lee, Pouya Hashemi, Takashi Ando, Alexander Reznicek | 2020-02-04 |
| 10546925 | Vertically stacked nFET and pFET with dual work function | Alexander Reznicek, Takashi Ando, Choonghyun Lee, Pouya Hashemi | 2020-01-28 |
| 10541239 | Semiconductor device and method of forming the semiconductor device | Robin Hsin Kuo Chao, Hemanth Jagannathan, Choonghyun Lee, Chun Wing Yeung | 2020-01-21 |
| 10529850 | Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile | Chun Wing Yeung, Choonghyun Lee, Robin Hsin Kuo Chao, Heng Wu | 2020-01-07 |
| 10529716 | Asymmetric threshold voltage VTFET with intrinsic dual channel epitaxy | Choonghyun Lee, Takashi Ando, Alexander Reznicek, Pouya Hashemi | 2020-01-07 |