Issued Patents 2020
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10784342 | Single diffusion breaks formed with liner protection for source and drain regions | Wei Hong, Jianwei Peng, Hui Zhan | 2020-09-22 |
| 10777637 | Integrated circuit product with a multi-layer single diffusion break and methods of making such products | Jiehui Shu, Hui Zang | 2020-09-15 |
| 10700173 | FinFET device with a wrap-around silicide source/drain contact structure | Yi Qi, Hsien-Ching Lo, Yanping Shen, Wei Hong, Xing Zhang +4 more | 2020-06-30 |
| 10643900 | Method to reduce FinFET short channel gate height | Xinyuan Dou, Zhenyu Hu, Xing Zhang | 2020-05-05 |
| 10580685 | Integrated single diffusion break | Hui Zang, Haiting Wang, Laertis Economikos | 2020-03-03 |
| 10566202 | Gate structures of FinFET semiconductor devices | Jiehui Shu, Hui Zang | 2020-02-18 |
| 10559470 | Capping structure | Haigou Huang, Jinsheng Gao, Jinping Liu, Huang Liu | 2020-02-11 |