Issued Patents 2020
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10714577 | Etch stop layer for use in forming contacts that extend to multiple depths | Wei Hong, Hui Zang | 2020-07-14 |
| 10700173 | FinFET device with a wrap-around silicide source/drain contact structure | Yi Qi, Hong Yu, Yanping Shen, Wei Hong, Xing Zhang +4 more | 2020-06-30 |
| 10636894 | Fin-type transistors with spacers on the gates | Yanping Shen, Hui Zang, Qun Gao, Jerome Ciavatti, Yi Qi +4 more | 2020-04-28 |
| 10559656 | Wrap-all-around contact for nanosheet-FET and method of forming same | Emilie Bourjot, Julien Frougier, Yi Qi, Ruilong Xie, Hui Zang +1 more | 2020-02-11 |
| 10553707 | FinFETs having gates parallel to fins | Yanping Shen, Hui Zang, Bingwu Liu, Manoj Joshi, Jae Gon Lee +1 more | 2020-02-04 |
| 10546775 | Field-effect transistors with improved dielectric gap fill | Wei Hong, Liu Jiang, Yongjun Shi, Yi Qi, Hui Zang | 2020-01-28 |