Issued Patents 2020
Showing 1–5 of 5 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10825897 | Formation of enhanced faceted raised source/drain EPI material for transistor devices | Wei Hong, George R. Mulfinger, Hui Zang, Zhenyu Hu | 2020-11-03 |
| 10797049 | FinFET structure with dielectric bar containing gate to reduce effective capacitance, and method of forming same | Hui Zang, Haiting Wang, Chung Foong Tan, Guowei Xu, Ruilong Xie +1 more | 2020-10-06 |
| 10777642 | Formation of enhanced faceted raised source/drain epi material for transistor devices | Wei Hong, George R. Mulfinger, Hui Zang, Zhenyu Hu | 2020-09-15 |
| 10756184 | Faceted epitaxial source/drain regions | George R. Mulfinger, Timothy J. McArdle, Judson R. Holt, Steffen Sichler, Omur Isil Aydin +3 more | 2020-08-25 |
| 10546775 | Field-effect transistors with improved dielectric gap fill | Wei Hong, Yongjun Shi, Yi Qi, Hsien-Ching Lo, Hui Zang | 2020-01-28 |