Issued Patents 2019
Showing 26–44 of 44 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10325817 | Semiconductor fin patterning techniques to achieve uniform fin profiles for fin field effect transistors | Kangguo Cheng, Juntao Li, Peng Xu | 2019-06-18 |
| 10319813 | Nanosheet CMOS transistors | Kangguo Cheng, Juntao Li, Peng Xu | 2019-06-11 |
| 10319717 | Forming on-chip metal-insulator-semiconductor capacitor with pillars | Kangguo Cheng, Peng Xu, Chen Zhang | 2019-06-11 |
| 10312237 | Vertical transport transistors with equal gate stack thicknesses | Ruqiang Bao, Choonghyun Lee, Zheng Xu | 2019-06-04 |
| 10283592 | Approach to minimization of strain loss in strained fin field effect transistors | Kangguo Cheng, Juntao Li, Peng Xu | 2019-05-07 |
| 10276452 | Low undercut N-P work function metal patterning in nanosheet replacement metal gate process | Indira Seshadri, Ekmini Anuja De Silva, Jing Guo, Romain Lallement, Ruqiang Bao +1 more | 2019-04-30 |
| 10263075 | Nanosheet CMOS transistors | Kangguo Cheng, Juntao Li, Peng Xu | 2019-04-16 |
| 10263100 | Buffer regions for blocking unwanted diffusion in nanosheet transistors | Kangguo Cheng, Juntao Li, Peng Xu | 2019-04-16 |
| 10262861 | Forming a fin cut in a hardmask | Kangguo Cheng, Juntao Li, Peng Xu | 2019-04-16 |
| 10249755 | Transistor with asymmetric source/drain overlap | Kangguo Cheng, Peng Xu, Heng Wu | 2019-04-02 |
| 10242882 | Cyclic etch process to remove dummy gate oxide layer for fin field effect transistor fabrication | Donald F. Canaperi, Thamarai S. Devarajan, Sean Teehan | 2019-03-26 |
| 10236346 | Transistor having a high germanium percentage fin channel and a gradient source/drain junction doping profile | Kangguo Cheng, Peng Xu, Chen Zhang | 2019-03-19 |
| 10236364 | Tunnel transistor | Kangguo Cheng, Peng Xu, Heng Wu | 2019-03-19 |
| 10236290 | Method and structure for improving vertical transistor | Kangguo Cheng, Juntao Li, Peng Xu | 2019-03-19 |
| 10217658 | Method and structure for minimizing fin reveal variation in FinFET transistor | Kangguo Cheng, Juntao Li, Hao Tang | 2019-02-26 |
| 10217707 | Trench contact resistance reduction | Kangguo Cheng, Juntao Li, Peng Xu | 2019-02-26 |
| 10211288 | Vertical transistors with multiple gate lengths | Kangguo Cheng, Peng Xu, Zheng Xu | 2019-02-19 |
| 10170640 | FinFET transistor gate and epitaxy formation | Ruqiang Bao, Kangguo Cheng, Zheng Xu | 2019-01-01 |
| 10170331 | Stacked nanowires | Kangguo Cheng, Juntao Li, Xin Miao | 2019-01-01 |