Issued Patents 2018
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10115601 | Selective film formation for raised and recessed features using deposition and etching processes | — | 2018-10-30 |
| 10079151 | Method for bottom-up deposition of a film in a recessed feature | David L. O'Meara, Kaushik A. Kumar | 2018-09-18 |
| 10068764 | Selective metal oxide deposition using a self-assembled monolayer surface pretreatment | Gerrit J. Leusink, Cory Wajda, Hoyoung Kang | 2018-09-04 |
| 10062564 | Method of selective gas phase film deposition on a substrate by modifying the surface using hydrogen plasma | — | 2018-08-28 |
| 10049913 | Methods for SiO2 filling of fine recessed features and selective SiO2 deposition on catalytic surfaces | — | 2018-08-14 |
| 10014213 | Selective bottom-up metal feature filling for interconnects | Kai-Hung Yu, Robert D. Clark, Gerrit J. Leusink | 2018-07-03 |
| 10008564 | Method of corner rounding and trimming of nanowires by microwave plasma | Ying Trickett, Chihiro TAMURA, Cory Wajda, Gerrit J. Leusink, Kaoru Maekawa | 2018-06-26 |
| 9997598 | Three-dimensional semiconductor device and method of fabrication | Jeffrey Smith, Anton J. deVilliers, Nihar Mohanty, Subhadeep Kal | 2018-06-12 |
| 9984890 | Isotropic silicon and silicon-germanium etching with tunable selectivity | Subhadeep Kal, Aelan Mosden | 2018-05-29 |
| 9893161 | Parasitic capacitance reduction structure for nanowire transistors and method of manufacturing | Genji Nakamura | 2018-02-13 |
| 9882026 | Method for forming a nanowire structure | Genji Nakamura | 2018-01-30 |