Issued Patents 2018
Showing 51–63 of 63 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9911739 | III-V FinFET CMOS with III-V and germanium-containing channel closely spaced | Kangguo Cheng, Alexander Reznicek, Ghavam G. Shahidi | 2018-03-06 |
| 9911741 | Dual channel material for finFET for high performance CMOS | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2018-03-06 |
| 9911662 | Forming a CMOS with dual strained channels | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2018-03-06 |
| 9899384 | Self aligned structure and method for high-K metal gate work function tuning | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2018-02-20 |
| 9899378 | Simultaneously fabricating a high voltage transistor and a finFET | Kangguo Cheng, Alexander Reznicek, Charan V. Surisetty | 2018-02-20 |
| 9892978 | Forming a CMOS with dual strained channels | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2018-02-13 |
| 9892926 | Replacement low-k spacer | Xiuyu Cai, Kangguo Cheng, Ruilong Xie | 2018-02-13 |
| 9871118 | Semiconductor structure with an L-shaped bottom plate | Kangguo Cheng, Wilfried E. Haensch, Davood Shahrjerdi | 2018-01-16 |
| 9870989 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Kangguo Cheng, Juntao Li | 2018-01-16 |
| 9865737 | Formation of FinFET junction | Kevin K. Chan, Pouya Hashemi, John A. Ott, Alexander Reznicek | 2018-01-09 |
| 9865511 | Formation of strained fins in a finFET device | Pouya Hashemi, Alexander Reznicek | 2018-01-09 |
| 9859369 | Semiconductor device including nanowire transistors with hybrid channels | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2018-01-02 |
| 9859425 | Field-effect transistor with aggressively strained fins | Pouya Hashemi, Alexander Reznicek | 2018-01-02 |