| 9853114 |
Field effect transistor with stacked nanowire-like channels and methods of manufacturing the same |
Borna J. Obradovic |
2017-12-26 |
| 9831323 |
Structure and method to achieve compressively strained Si NS |
Jorge A. Kittl, Ganesh Hegde, Robert C. Bowen, Borna J. Obradovic |
2017-11-28 |
| 9812449 |
Multi-VT gate stack for III-V nanosheet devices with reduced parasitic capacitance |
Borna J. Obradovic, Titash Rakshit, Wei-E Wang |
2017-11-07 |
| 9793403 |
Multi-layer fin field effect transistor devices and methods of forming the same |
Borna J. Obradovic, Robert C. Bowen, Titash Rakshit, Wei-E Wang |
2017-10-17 |
| 9773886 |
Nanosheet and nanowire devices having doped internal spacers and methods of manufacturing the same |
Dharmendar Reddy Palle, Jorge A. Kittl |
2017-09-26 |
| 9773906 |
Relaxed semiconductor layers with reduced defects and methods of forming the same |
Wei-E Wang, Ganesh Hedge, Christopher Rhys Bowen |
2017-09-26 |
| 9773904 |
Vertical field effect transistor with biaxial stressor layer |
Borna J. Obradovic, Chris Bowen, Titash Rakshit, Palle Dharmendar |
2017-09-26 |
| 9768062 |
Method for forming low parasitic capacitance source and drain contacts |
Jorge A. Kittl, David Seo, Kota OIKAWA, Kim Changhwa, Rwik Sengupta |
2017-09-19 |
| 9728502 |
Metal oxysilicate diffusion barriers for damascene metallization with low RC delays and methods for forming the same |
Ganesh Hegde, Rwik Sengupta, Chris Bowen |
2017-08-08 |
| 9716176 |
FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same |
Borna J. Obradovic, Robert C. Bowen |
2017-07-25 |
| 9711414 |
Strained stacked nanosheet FETS and/or quantum well stacked nanosheet |
Ryan M. Hatcher, Robert C. Bowen, Borna J. Obradovic, Joon Goo Hong |
2017-07-18 |
| 9698234 |
Interface layer for gate stack using O3 post treatment |
Jorge A. Kittl, Wei-E Wang |
2017-07-04 |
| 9691860 |
Methods of forming defect-free SRB onto lattice-mismatched substrates and defect-free fins on insulators |
Wei-E Wang, Rwik Sengupta |
2017-06-27 |
| 9685564 |
Gate-all-around field effect transistors with horizontal nanosheet conductive channel structures for MOL/inter-channel spacing and related cell architectures |
Rwik Sengupta, Joon Goo Hong, Titash Rakshit |
2017-06-20 |
| 9685509 |
Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions |
Jorge A. Kittl, Robert C. Bowen |
2017-06-20 |
| 9653287 |
S/D connection to individual channel layers in a nanosheet FET |
Joon Goo Hong, Jorge A. Kittl, Borna J. Obradovic |
2017-05-16 |
| 9647098 |
Thermionically-overdriven tunnel FETs and methods of fabricating the same |
Borna J. Obradovic, Robert C. Bowen, Dharmendar Reddy Palle |
2017-05-09 |
| 9634140 |
Fabricating metal source-drain stressor in a MOS device channel |
Jorge A. Kittl, Ganesh Hegde |
2017-04-25 |
| 9613907 |
Low resistivity damascene interconnect |
Ganesh Hegde, Jorge A. Kittl, Robert C. Bowen |
2017-04-04 |
| 9601586 |
Methods of forming semiconductor devices, including forming a metal layer on source/drain regions |
Jorge A. Kittl, Joon Goo Hong |
2017-03-21 |
| 9583590 |
Integrated circuit devices including FinFETs and methods of forming the same |
Borna J. Obradovic, Robert C. Bowen |
2017-02-28 |
| 9570609 |
Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same |
Borna J. Obradovic, Robert C. Bowen |
2017-02-14 |
| 9570395 |
Semiconductor device having buried power rail |
Rwik Sengupta, Joon Goo Hong |
2017-02-14 |
