BO

Borna J. Obradovic

Samsung: 14 patents #164 of 15,326Top 2%
Overall (2017): #3,720 of 506,227Top 1%
14
Patents 2017

Issued Patents 2017

Showing 1–14 of 14 patents

Patent #TitleCo-InventorsDate
9853114 Field effect transistor with stacked nanowire-like channels and methods of manufacturing the same Mark S. Rodder 2017-12-26
9831323 Structure and method to achieve compressively strained Si NS Jorge A. Kittl, Ganesh Hegde, Robert C. Bowen, Mark S. Rodder 2017-11-28
9812449 Multi-VT gate stack for III-V nanosheet devices with reduced parasitic capacitance Titash Rakshit, Mark S. Rodder, Wei-E Wang 2017-11-07
9805795 Zero leakage, high noise margin coupled giant spin hall based retention latch Titash Rakshit 2017-10-31
9793403 Multi-layer fin field effect transistor devices and methods of forming the same Robert C. Bowen, Titash Rakshit, Wei-E Wang, Mark S. Rodder 2017-10-17
9773904 Vertical field effect transistor with biaxial stressor layer Chris Bowen, Titash Rakshit, Palle Dharmendar, Mark S. Rodder 2017-09-26
9741811 Integrated circuit devices including source/drain extension regions and methods of forming the same Ryan M. Hatcher 2017-08-22
9716176 FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same Mark S. Rodder, Robert C. Bowen 2017-07-25
9711414 Strained stacked nanosheet FETS and/or quantum well stacked nanosheet Ryan M. Hatcher, Robert C. Bowen, Mark S. Rodder, Joon Goo Hong 2017-07-18
9653287 S/D connection to individual channel layers in a nanosheet FET Mark S. Rodder, Joon Goo Hong, Jorge A. Kittl 2017-05-16
9647098 Thermionically-overdriven tunnel FETs and methods of fabricating the same Robert C. Bowen, Dharmendar Reddy Palle, Mark S. Rodder 2017-05-09
9614002 0T bi-directional memory cell Ryan M. Hatcher, Titash Rakshit, Jorge A. Kittl, Joon Goo Hong 2017-04-04
9583590 Integrated circuit devices including FinFETs and methods of forming the same Robert C. Bowen, Mark S. Rodder 2017-02-28
9570609 Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same Robert C. Bowen, Mark S. Rodder 2017-02-14