Issued Patents 2017
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9831323 | Structure and method to achieve compressively strained Si NS | Jorge A. Kittl, Ganesh Hegde, Borna J. Obradovic, Mark S. Rodder | 2017-11-28 |
| 9793403 | Multi-layer fin field effect transistor devices and methods of forming the same | Borna J. Obradovic, Titash Rakshit, Wei-E Wang, Mark S. Rodder | 2017-10-17 |
| 9716176 | FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same | Mark S. Rodder, Borna J. Obradovic | 2017-07-25 |
| 9711414 | Strained stacked nanosheet FETS and/or quantum well stacked nanosheet | Ryan M. Hatcher, Mark S. Rodder, Borna J. Obradovic, Joon Goo Hong | 2017-07-18 |
| 9685509 | Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions | Jorge A. Kittl, Mark S. Rodder | 2017-06-20 |
| 9647098 | Thermionically-overdriven tunnel FETs and methods of fabricating the same | Borna J. Obradovic, Dharmendar Reddy Palle, Mark S. Rodder | 2017-05-09 |
| 9613907 | Low resistivity damascene interconnect | Ganesh Hegde, Mark S. Rodder, Jorge A. Kittl | 2017-04-04 |
| 9583590 | Integrated circuit devices including FinFETs and methods of forming the same | Borna J. Obradovic, Mark S. Rodder | 2017-02-28 |
| 9570609 | Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same | Borna J. Obradovic, Mark S. Rodder | 2017-02-14 |