| 9831323 |
Structure and method to achieve compressively strained Si NS |
Jorge A. Kittl, Ganesh Hegde, Borna J. Obradovic, Mark S. Rodder |
2017-11-28 |
| 9793403 |
Multi-layer fin field effect transistor devices and methods of forming the same |
Borna J. Obradovic, Titash Rakshit, Wei-E Wang, Mark S. Rodder |
2017-10-17 |
| 9716176 |
FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same |
Mark S. Rodder, Borna J. Obradovic |
2017-07-25 |
| 9711414 |
Strained stacked nanosheet FETS and/or quantum well stacked nanosheet |
Ryan M. Hatcher, Mark S. Rodder, Borna J. Obradovic, Joon Goo Hong |
2017-07-18 |
| 9685509 |
Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions |
Jorge A. Kittl, Mark S. Rodder |
2017-06-20 |
| 9647098 |
Thermionically-overdriven tunnel FETs and methods of fabricating the same |
Borna J. Obradovic, Dharmendar Reddy Palle, Mark S. Rodder |
2017-05-09 |
| 9613907 |
Low resistivity damascene interconnect |
Ganesh Hegde, Mark S. Rodder, Jorge A. Kittl |
2017-04-04 |
| 9583590 |
Integrated circuit devices including FinFETs and methods of forming the same |
Borna J. Obradovic, Mark S. Rodder |
2017-02-28 |
| 9570609 |
Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same |
Borna J. Obradovic, Mark S. Rodder |
2017-02-14 |
