XZ

Xunyuan Zhang

Globalfoundries: 16 patents #16 of 1,311Top 2%
IBM: 1 patents #5,570 of 10,852Top 55%
📍 Mechanicsburg, PA: #1 of 40 inventorsTop 3%
🗺 Pennsylvania: #21 of 7,529 inventorsTop 1%
Overall (2017): #2,446 of 506,227Top 1%
16
Patents 2017

Issued Patents 2017

Showing 1–16 of 16 patents

Patent #TitleCo-InventorsDate
9853110 Method of forming a gate contact structure for a semiconductor device Ruilong Xie, Sean Xuan Lin 2017-12-26
9837268 Raised fin structures and methods of fabrication Yi Qi, Catherine B. Labelle 2017-12-05
9831174 Devices and methods of forming low resistivity noble metal interconnect Frank W. Mont, Errol Todd Ryan 2017-11-28
9831124 Interconnect structures Frank W. Mont 2017-11-28
9824921 Method and apparatus for placing a gate contact inside a semiconductor active region having high-k dielectric gate caps Andre P. Labonte, Ruilong Xie 2017-11-21
9824970 Methods that use at least a dual damascene process and, optionally, a single damascene process to form interconnects with hybrid metallization and the resulting structures Ruilong Xie 2017-11-21
9805972 Skip via structures Sean Xuan Lin, James Jay McMahon, Shao Beng Law 2017-10-31
9799559 Methods employing sacrificial barrier layer for protection of vias during trench formation Shariq Siddiqui, Frank W. Mont, Brown C. Peethala, Douglas M. Trickett 2017-10-24
9799555 Cobalt interconnects covered by a metal cap Frank W. Mont 2017-10-24
9721889 Middle of the line (MOL) metal contacts Chengyu Niu, Vimal Kamineni, Mark V. Raymond 2017-08-01
9666791 Topological method to build self-aligned MTJ without a mask Ruilong Xie, Xiuyu Cai, Seowoo Nam, Hyun-Jin Cho 2017-05-30
9613906 Integrated circuits including modified liners and methods for fabricating the same Errol Todd Ryan 2017-04-04
9589836 Methods of forming ruthenium conductive structures in a metallization layer Hoon Kim 2017-03-07
9570394 Formation of IC structure with pair of unitary metal fins Nicholas V. LiCausi, Errol Todd Ryan 2017-02-14
9559059 Methods of forming an improved via to contact interface by selective formation of a conductive capping layer Tibor Bolom, Errol Todd Ryan 2017-01-31
9553017 Methods for fabricating integrated circuits including back-end-of-the-line interconnect structures 2017-01-24