| 9524972 |
Metal layers for a three-port bit cell |
Niladri Narayan Mojumder, Ritu Chaba, Ping-Lin Liu, Stanley Seungchul Song, Choh Fei Yeap |
2016-12-20 |
| 9508589 |
Conductive layer routing |
Stanley Seungchul Song, Kern Rim, Jeffrey Junhao Xu, Xiangdong Chen, Choh Fei Yeap |
2016-11-29 |
| 9508439 |
Non-volatile multiple time programmable memory device |
Xia Li, Jeffrey Junhao Xu, Xiao Lu, Matthew Michael Nowak, Seung H. Kang +2 more |
2016-11-29 |
| 9502424 |
Integrated circuit device featuring an antifuse and method of making same |
John Jianhong Zhu, Xia Li |
2016-11-22 |
| 9496048 |
Differential one-time-programmable (OTP) memory array |
Xiaonan Chen, Xia Li |
2016-11-15 |
| 9495503 |
Method and apparatus to enable a selective push process during manufacturing to improve performance of a selected circuit of an integrated circuit |
Jeffrey Herbert Fischer, Manish Garg |
2016-11-15 |
| 9478490 |
Capacitor from second level middle-of-line layer in combination with decoupling capacitors |
John Jianhong Zhu, Stanley Seungchul Song, Kern Rim, Jeffrey Junhao Xu |
2016-10-25 |
| 9461055 |
Advanced metal-nitride-oxide-silicon multiple-time programmable memory |
Xia Li, Daniel Wayne Perry |
2016-10-04 |
| 9460777 |
SRAM read buffer with reduced sensing delay and improved sensing margin |
Seong-Ook Jung, Younghwi Yang, Stanley Seungchul Song, Choh Fei Yeap |
2016-10-04 |
| 9455026 |
Shared global read and write word lines |
Niladri Narayan Mojumder, Stanley Seungchul Song, Ping-Lin Liu, Kern Rim, Choh Fei Yeap |
2016-09-27 |
| 9449709 |
Volatile memory and one-time program (OTP) compatible memory cell and programming method |
Xia Li, Xiaonan Chen, Niladri Narayan Mojumder, Weidan Li |
2016-09-20 |
| 9431097 |
Volatile/non-volatile SRAM device |
Xiaonan Chen, Xia Li |
2016-08-30 |
| 9424909 |
Static random access memory (SRAM) arrays having substantially constant operational yields across multiple modes of operation |
Niladri Narayan Mojumder, Ping-Lin Liu, Stanley Seungchul Song, Choh Fei Yeap |
2016-08-23 |
| 9413349 |
High-K (HK)/metal gate (MG) (HK/MG) multi-time programmable (MTP) switching devices, and related systems and methods |
Xia Li, Xiao Lu, Xiaonan Chen, Choh Fei Yeap |
2016-08-09 |
| 9396931 |
Method of forming fins from different materials on a substrate |
Stanley Seungchul Song, Choh Fei Yeap |
2016-07-19 |
| 9379058 |
Grounding dummy gate in scaled layout design |
Stanley Seungchul Song, Ohsang Kwon, Kern Rim, John Jianhong Zhu, Xiangdong Chen +3 more |
2016-06-28 |
| 9378803 |
System and method to regulate operating voltage of a memory array |
Stanley Seungchul Song |
2016-06-28 |
| 9349686 |
Reduced height M1 metal lines for local on-chip routing |
Stanley Seungchul Song, Choh Fei Yeap, Niladri Narayan Mojumder, Mustafa Badaroglu |
2016-05-24 |
| 9336863 |
Dual write wordline memory cell |
Seong-Ook Jung, Younghwi Yang, Stanley Seungchul Song, Choh Fei Yeap |
2016-05-10 |
| 9336864 |
Silicon germanium read port for a static random access memory register file |
Niladri Narayan Mojumder, Stanley Seungchul Song, Choh Fei Yeap |
2016-05-10 |
| 9318564 |
High density static random access memory array having advanced metal patterning |
Niladri Narayan Mojumder, Stanley Seungchul Song, Choh Fei Yeap |
2016-04-19 |
| 9263279 |
Combining cut mask lithography and conventional lithography to achieve sub-threshold pattern features |
John Jianhong Zhu, Da Yang |
2016-02-16 |
| 9257407 |
Heterogeneous channel material integration into wafer |
Stanley Seungchul Song, Choh Fei Yeap, Niladri Narayan Mojumder |
2016-02-09 |