| 9396946 |
Wet chemistry processes for fabricating a semiconductor device with increased channel mobility |
Sarit Dhar, Lin Cheng, Sei-Hyung Ryu, Anant Agarwal, Erik Maki +2 more |
2016-07-19 |
| 9373617 |
High current, low switching loss SiC power module |
Mrinal K. Das, Henry Lin, Marcelo Schupbach |
2016-06-21 |
| 9349797 |
SiC devices with high blocking voltage terminated by a negative bevel |
Lin Cheng, Anant Agarwal, Michael O'Loughlin, Albert Augustus Burk, Jr. |
2016-05-24 |
| 9331197 |
Vertical power transistor device |
Vipindas Pala, Anant Agarwal, Lin Cheng, Daniel Jenner Lichtenwalner |
2016-05-03 |
| 9318597 |
Layout configurations for integrating schottky contacts into a power transistor device |
Vipindas Pala, Edward Robert Van Brunt, Lin Cheng |
2016-04-19 |
| 9306061 |
Field effect transistor devices with protective regions |
Lin Cheng, Anant Agarwal, Vipindas Pala |
2016-04-05 |
| 9269580 |
Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof |
Sarit Dhar, Lin Cheng, Sei-Hyung Ryu, Anant Agarwal, Jason Gurganus |
2016-02-23 |
| 9240476 |
Field effect transistor devices with buried well regions and epitaxial layers |
Vipindis Pala, Lin Cheng, Jason Henning, Anant Agarwal |
2016-01-19 |
| 9236433 |
Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer |
Vipindas Pala, Edward Robert Van Brunt, Daniel Jenner Lichtenwalner, Lin Cheng, Anant Agarwal |
2016-01-12 |
| 9231122 |
Schottky diode |
Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, Scott Allen |
2016-01-05 |