| 9530844 |
Transistor structures having reduced electrical field at the gate oxide and methods for making same |
Brett Hull |
2016-12-27 |
| 9478537 |
High-gain wide bandgap darlington transistors and related methods of fabrication |
Anant Agarwal |
2016-10-25 |
| 9466674 |
Semiconductor devices with non-implanted barrier regions and methods of fabricating same |
Scott Allen |
2016-10-11 |
| 9431525 |
IGBT with bidirectional conduction |
Sei-Hyung Ryu |
2016-08-30 |
| 9385182 |
Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same |
Jason Henning, Sei-Hyung Ryu |
2016-07-05 |
| 9337268 |
SiC devices with high blocking voltage terminated by a negative bevel |
Craig Capell, Anant Agarwal, Sei-Hyung Ryu |
2016-05-10 |
| 9318624 |
Schottky structure employing central implants between junction barrier elements |
— |
2016-04-19 |
| 9318623 |
Recessed termination structures and methods of fabricating electronic devices including recessed termination structures |
Jason Henning |
2016-04-19 |
| 9312343 |
Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials |
Sei-Hyung Ryu, Anant Agarwal, Sarit Dhar |
2016-04-12 |
| 9231122 |
Schottky diode |
Jason Henning, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen |
2016-01-05 |