Issued Patents 2016
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9515135 | Edge termination structures for silicon carbide devices | Anant Agarwal, Allan Ward | 2016-12-06 |
| 9478616 | Semiconductor device having high performance channel | Sarit Dhar, Lin Cheng, Anant Agarwal | 2016-10-25 |
| 9431525 | IGBT with bidirectional conduction | Qingchun Zhang | 2016-08-30 |
| 9396946 | Wet chemistry processes for fabricating a semiconductor device with increased channel mobility | Sarit Dhar, Lin Cheng, Anant Agarwal, John Williams Palmour, Erik Maki +2 more | 2016-07-19 |
| 9385182 | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same | Jason Henning, Qingchun Zhang | 2016-07-05 |
| 9349596 | Methods of processing semiconductor wafers having silicon carbide power devices thereon | Anant Agarwal, Matthew Donofrio | 2016-05-24 |
| 9343540 | Transistors with a gate insulation layer having a channel depleting interfacial charge | Sarit Dhar | 2016-05-17 |
| 9337268 | SiC devices with high blocking voltage terminated by a negative bevel | Qingchun Zhang, Craig Capell, Anant Agarwal | 2016-05-10 |
| 9312343 | Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials | Qingchun Zhang, Anant Agarwal, Sarit Dhar | 2016-04-12 |
| 9312256 | Bidirectional silicon carbide transient voltage supression devices | Sarah Haney | 2016-04-12 |
| 9269580 | Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof | Sarit Dhar, Lin Cheng, Anant Agarwal, John Williams Palmour, Jason Gurganus | 2016-02-23 |
| 9231122 | Schottky diode | Jason Henning, Qingchun Zhang, Anant Agarwal, John Williams Palmour, Scott Allen | 2016-01-05 |