Issued Patents 2016
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9515199 | Power semiconductor devices having superjunction structures with implanted sidewalls | Edward Robert Van Brunt, Vipindas Pala, Daniel Jenner Lichtenwalner | 2016-12-06 |
| 9484413 | Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions | Edward Robert Van Brunt, Alexander V. Suvorov, Vipindas Pala | 2016-11-01 |
| 9478616 | Semiconductor device having high performance channel | Sarit Dhar, Sei-Hyung Ryu, Anant Agarwal | 2016-10-25 |
| 9425265 | Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure | Edward Robert Van Brunt, Vipindas Pala, Anant Agarwal | 2016-08-23 |
| 9396946 | Wet chemistry processes for fabricating a semiconductor device with increased channel mobility | Sarit Dhar, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Erik Maki +2 more | 2016-07-19 |
| 9349797 | SiC devices with high blocking voltage terminated by a negative bevel | Anant Agarwal, Michael O'Loughlin, Albert Augustus Burk, Jr., John Williams Palmour | 2016-05-24 |
| 9331197 | Vertical power transistor device | Vipindas Pala, Anant Agarwal, Daniel Jenner Lichtenwalner, John Williams Palmour | 2016-05-03 |
| 9318597 | Layout configurations for integrating schottky contacts into a power transistor device | Vipindas Pala, Edward Robert Van Brunt, John Williams Palmour | 2016-04-19 |
| 9306061 | Field effect transistor devices with protective regions | Anant Agarwal, Vipindas Pala, John Williams Palmour | 2016-04-05 |
| 9269580 | Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof | Sarit Dhar, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Jason Gurganus | 2016-02-23 |
| 9240476 | Field effect transistor devices with buried well regions and epitaxial layers | Vipindis Pala, Jason Henning, Anant Agarwal, John Williams Palmour | 2016-01-19 |
| 9236433 | Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer | Vipindas Pala, Edward Robert Van Brunt, Daniel Jenner Lichtenwalner, Anant Agarwal, John Williams Palmour | 2016-01-12 |