| 9515199 |
Power semiconductor devices having superjunction structures with implanted sidewalls |
Edward Robert Van Brunt, Lin Cheng, Daniel Jenner Lichtenwalner |
2016-12-06 |
| 9484413 |
Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions |
Edward Robert Van Brunt, Alexander V. Suvorov, Lin Cheng |
2016-11-01 |
| 9425265 |
Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure |
Edward Robert Van Brunt, Lin Cheng, Anant Agarwal |
2016-08-23 |
| 9331197 |
Vertical power transistor device |
Anant Agarwal, Lin Cheng, Daniel Jenner Lichtenwalner, John Williams Palmour |
2016-05-03 |
| 9318597 |
Layout configurations for integrating schottky contacts into a power transistor device |
Edward Robert Van Brunt, Lin Cheng, John Williams Palmour |
2016-04-19 |
| 9306061 |
Field effect transistor devices with protective regions |
Lin Cheng, Anant Agarwal, John Williams Palmour |
2016-04-05 |
| 9236433 |
Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer |
Edward Robert Van Brunt, Daniel Jenner Lichtenwalner, Lin Cheng, Anant Agarwal, John Williams Palmour |
2016-01-12 |