| 9514050 |
Caching in multicore and multiprocessor architectures |
Ian Rudolf Bratt, Matthew Mattina |
2016-12-06 |
| 9515135 |
Edge termination structures for silicon carbide devices |
Sei-Hyung Ryu, Allan Ward |
2016-12-06 |
| 9478616 |
Semiconductor device having high performance channel |
Sarit Dhar, Sei-Hyung Ryu, Lin Cheng |
2016-10-25 |
| 9478537 |
High-gain wide bandgap darlington transistors and related methods of fabrication |
Qingchun Zhang |
2016-10-25 |
| 9425265 |
Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure |
Edward Robert Van Brunt, Vipindas Pala, Lin Cheng |
2016-08-23 |
| 9396946 |
Wet chemistry processes for fabricating a semiconductor device with increased channel mobility |
Sarit Dhar, Lin Cheng, Sei-Hyung Ryu, John Williams Palmour, Erik Maki +2 more |
2016-07-19 |
| 9361402 |
Tiered index management |
Blaine French, Shailesh Mungikar, Nandan Marathe |
2016-06-07 |
| 9349596 |
Methods of processing semiconductor wafers having silicon carbide power devices thereon |
Sei-Hyung Ryu, Matthew Donofrio |
2016-05-24 |
| 9349797 |
SiC devices with high blocking voltage terminated by a negative bevel |
Lin Cheng, Michael O'Loughlin, Albert Augustus Burk, Jr., John Williams Palmour |
2016-05-24 |
| 9337268 |
SiC devices with high blocking voltage terminated by a negative bevel |
Qingchun Zhang, Craig Capell, Sei-Hyung Ryu |
2016-05-10 |
| 9331197 |
Vertical power transistor device |
Vipindas Pala, Lin Cheng, Daniel Jenner Lichtenwalner, John Williams Palmour |
2016-05-03 |
| 9312343 |
Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials |
Qingchun Zhang, Sei-Hyung Ryu, Sarit Dhar |
2016-04-12 |
| 9306061 |
Field effect transistor devices with protective regions |
Lin Cheng, Vipindas Pala, John Williams Palmour |
2016-04-05 |
| 9298618 |
Managing cache memory in a parallel processing environment |
David Wentzlaff, Matthew Mattina |
2016-03-29 |
| 9269580 |
Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof |
Sarit Dhar, Lin Cheng, Sei-Hyung Ryu, John Williams Palmour, Jason Gurganus |
2016-02-23 |
| 9240476 |
Field effect transistor devices with buried well regions and epitaxial layers |
Vipindis Pala, Lin Cheng, Jason Henning, John Williams Palmour |
2016-01-19 |
| 9236433 |
Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer |
Vipindas Pala, Edward Robert Van Brunt, Daniel Jenner Lichtenwalner, Lin Cheng, John Williams Palmour |
2016-01-12 |
| 9231122 |
Schottky diode |
Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, John Williams Palmour, Scott Allen |
2016-01-05 |