| 9515199 |
Power semiconductor devices having superjunction structures with implanted sidewalls |
Vipindas Pala, Lin Cheng, Daniel Jenner Lichtenwalner |
2016-12-06 |
| 9484413 |
Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions |
Alexander V. Suvorov, Vipindas Pala, Lin Cheng |
2016-11-01 |
| 9425265 |
Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure |
Vipindas Pala, Lin Cheng, Anant Agarwal |
2016-08-23 |
| 9318597 |
Layout configurations for integrating schottky contacts into a power transistor device |
Vipindas Pala, Lin Cheng, John Williams Palmour |
2016-04-19 |
| 9236433 |
Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer |
Vipindas Pala, Daniel Jenner Lichtenwalner, Lin Cheng, Anant Agarwal, John Williams Palmour |
2016-01-12 |