Issued Patents 2016
Showing 1–5 of 5 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9515199 | Power semiconductor devices having superjunction structures with implanted sidewalls | Vipindas Pala, Lin Cheng, Daniel Jenner Lichtenwalner | 2016-12-06 |
| 9484413 | Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions | Alexander V. Suvorov, Vipindas Pala, Lin Cheng | 2016-11-01 |
| 9425265 | Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure | Vipindas Pala, Lin Cheng, Anant Agarwal | 2016-08-23 |
| 9318597 | Layout configurations for integrating schottky contacts into a power transistor device | Vipindas Pala, Lin Cheng, John Williams Palmour | 2016-04-19 |
| 9236433 | Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer | Vipindas Pala, Daniel Jenner Lichtenwalner, Lin Cheng, Anant Agarwal, John Williams Palmour | 2016-01-12 |