| 9515141 |
FinFET device with channel strain |
Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve |
2016-12-06 |
| 9502411 |
Strained finFET device fabrication |
Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Stuart A. Sieg |
2016-11-22 |
| 9496371 |
Channel protection during fin fabrication |
Russell H. Arndt, Hong He, Gauri Karve, Muthumanickam Sankarapandian |
2016-11-15 |
| 9472506 |
Registration mark formation during sidewall image transfer process |
David J. Conklin, Allen H. Gabor, Sivananda K. Kanakasabapathy, Byeong Y. Kim, Stuart A. Sieg |
2016-10-18 |
| 9450095 |
Single spacer for complementary metal oxide semiconductor process flow |
Marc A. Bergendahl, Kangguo Cheng, Jessica Dechene, Eric R. Miller, Jeffrey C. Shearer +2 more |
2016-09-20 |
| 9425196 |
Multiple threshold voltage FinFETs |
Kangguo Cheng, Ramachandra Divakaruni, Juntao Li |
2016-08-23 |
| 9362179 |
Method to form dual channel semiconductor material fins |
Kangguo Cheng, Ryan O. Jung, Eric R. Miller, John R. Sporre, Sean Teehan |
2016-06-07 |
| 9331148 |
FinFET device with channel strain |
Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve |
2016-05-03 |
| 9318574 |
Method and structure for enabling high aspect ratio sacrificial gates |
Kangguo Cheng, Ryan O. Jung, Jeffrey C. Shearer, John R. Sporre, Sean Teehan |
2016-04-19 |
| 9305845 |
Self-aligned quadruple patterning process |
Matthew E. Colburn, Sivananda K. Kanakasabapathy, Stuart A. Sieg |
2016-04-05 |
