| 9484402 |
Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion |
Ming Cai, Liyang Song, Chun-Chen Yeh |
2016-11-01 |
| 9472640 |
Self aligned embedded gate carbon transistors |
Shu-Jen Han, Yu Lu, Keith Kwong Hon Wong |
2016-10-18 |
| 9437677 |
Deposition on a nanowire using atomic layer deposition |
Zhengwen Li, Kejia Wang, Zhen Zhang, Yu Zhu |
2016-09-06 |
| 9412641 |
FinFET having controlled dielectric region height |
Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh |
2016-08-09 |
| 9397197 |
Forming wrap-around silicide contact on finFET |
Hemanth Jagannathan, Zuoguang Liu, Shogo Mochizuki |
2016-07-19 |
| 9397158 |
Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion |
Ming Cai, Liyang Song, Chun-Chen Yeh |
2016-07-19 |
| 9390976 |
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction |
Shogo Mochizuki, Andreas Scholze, Chun-Chen Yeh |
2016-07-12 |
| 9337289 |
Replacement gate MOSFET with a high performance gate electrode |
Zhengwen Li, Randolph F. Knarr, Chengwen Pei, Gan Wang, Yanfeng Wang +3 more |
2016-05-10 |
| 9318581 |
Forming wrap-around silicide contact on finFET |
Hemanth Jagannathan, Zuoguang Liu, Shogo Mochizuki |
2016-04-19 |
| 9312358 |
Partially-blocked well implant to improve diode ideality with SiGe anode |
Wilfried Haensch, Gan Wang, Yanfeng Wang, Xin Wang |
2016-04-12 |
| 9299795 |
Partial sacrificial dummy gate with CMOS device with high-k metal gate |
Wilfried E. Haensch, Shu-Jen Han, Daniel Jaeger, Yu Lu, Keith Kwong Hon Wong |
2016-03-29 |
| 9287399 |
Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels |
Bhupesh Chandra, Paul Chang, Gregory G. Freeman, Judson R. Holt, Arvind Kumar +6 more |
2016-03-15 |
| 9250204 |
Graphene sensor |
Shu-Jen Han, Chung-Hsun Lin, Ning Su |
2016-02-02 |
| 9252234 |
Partially-blocked well implant to improve diode ideality with SiGe anode |
Wilfried Haensch, Gan Wang, Yanfeng Wang, Xin Wang |
2016-02-02 |
| 9252146 |
Work function adjustment by carbon implant in semiconductor devices including gate structure |
Yue Liang, William K. Henson, Shreesh Narasimha, Yanfeng Wang |
2016-02-02 |
