Issued Patents 2011
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8043920 | finFETS and methods of making same | Kevin K. Chan, Thomas S. Kanarsky, Jinghong Li, Christine Qiqing Ouyang, Dae-Gyu Park +2 more | 2011-10-25 |
| 8039888 | Conductive spacers for semiconductor devices and methods of forming | Gary B. Bronner, David M. Fried, Jeffrey P. Gambino, Leland Chang, Ramachandra Divakaruni +2 more | 2011-10-18 |
| 7999319 | Trench-edge-defect-free recrystallization by edge-angle-optimized solid phase epitaxy: method and applications to hybrid orientation substrates | Katherine L. Saenger, Chun-Yung Sung | 2011-08-16 |
| 7999332 | Asymmetric semiconductor devices and method of fabricating | Jun Yuan, Dureseti Chidambarrao, Sunfei Fang, Yue Liang, Xiaojun Yu | 2011-08-16 |
| 7989297 | Asymmetric epitaxy and application thereof | Xinhui Wang, Kevin K. Chan, Zhibin Ren | 2011-08-02 |
| 7977712 | Asymmetric source and drain field effect structure | Huilong Zhu, Hong Lin, Katherine L. Saenger, Kai Xiu | 2011-07-12 |
| 7968915 | Dual stress memorization technique for CMOS application | Thomas S. Kanarsky, Qiqing C. Ouyang | 2011-06-28 |
| 7960263 | Amorphization/templated recrystallization method for hybrid orientation substrates | Keith E. Fogel, Katherine L. Saenger, Chun-Yung Sung | 2011-06-14 |
| 7897468 | Device having self-aligned double gate formed by backside engineering, and device having super-steep retrograded island | Zhijiong Luo, Qingqing Liang, Huilong Zhu | 2011-03-01 |
| 7863712 | Hybrid orientation semiconductor structure with reduced boundary defects and method of forming same | John A. Ott, Katherine L. Saenger, Chun-Yung Sung | 2011-01-04 |