Issued Patents 2011
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8043920 | finFETS and methods of making same | Kevin K. Chan, Thomas S. Kanarsky, Jinghong Li, Christine Qiqing Ouyang, Zhibin Ren +2 more | 2011-10-25 |
| 8030716 | Self-aligned CMOS structure with dual workfunction | Michael P. Chudzik, Vijay Narayanan, Vamsi K. Paruchuri | 2011-10-04 |
| 7989298 | Transistor having V-shaped embedded stressor | Kevin K. Chan, Brian J. Greene, Judson R. Holt, Jeffrey B. Johnson, Thomas S. Kanarsky +4 more | 2011-08-02 |
| 7947549 | Gate effective-workfunction modification for CMOS | Michael P. Chudzik, Rashmi Jha, Siddarth A. Krishnan, Naim Moumen, Vijay Narayanan +1 more | 2011-05-24 |
| 7911008 | SRAM cell having a rectangular combined active area for planar pass gate and planar pull-down NFETS | Xiangdong Chen, Shang-Bin Ko | 2011-03-22 |
| 7893502 | Threshold voltage improvement employing fluorine implantation and adjustment oxide layer | Weipeng Li, Melanie J. Sherony, Jin-Ping Han, Yong Meng Lee | 2011-02-22 |
| 7872303 | FinFET with longitudinal stress in a channel | Kevin K. Chan, Qiqing C. Ouyang, Xinhui Wang | 2011-01-18 |
| 7867839 | Method to reduce threshold voltage (Vt) in silicon germanium (SiGe), high-k dielectric-metal gate, p-type metal oxide semiconductor field effect transistors | Xiangdong Chen, Jong Ho Lee, Weipeng Li, Kenneth J. Stein, Voon-Yew Thean | 2011-01-11 |
| 7863126 | Fabrication of a CMOS structure with a high-k dielectric layer oxidizing an aluminum layer in PFET region | Michael P. Chudzik, Vijay Narayanan, Vamsi K. Paruchuri | 2011-01-04 |