Issued Patents 2011
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8043920 | finFETS and methods of making same | Thomas S. Kanarsky, Jinghong Li, Christine Qiqing Ouyang, Dae-Gyu Park, Zhibin Ren +2 more | 2011-10-25 |
| 8035141 | Bi-layer nFET embedded stressor element and integration to enhance drive current | Abhishek Dube, Jinghong Li, Viorel Ontalus, Zhengmao Zhu | 2011-10-11 |
| 8017499 | Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI) | Jack O. Chu, Kern Rim, Leathen Shi | 2011-09-13 |
| 7989297 | Asymmetric epitaxy and application thereof | Haizhou Yin, Xinhui Wang, Zhibin Ren | 2011-08-02 |
| 7989298 | Transistor having V-shaped embedded stressor | Brian J. Greene, Judson R. Holt, Jeffrey B. Johnson, Thomas S. Kanarsky, Jophy Stephen Koshy +4 more | 2011-08-02 |
| 7955928 | Structure and method of fabricating FinFET | Zhibin Ren, Xinhui Wang | 2011-06-07 |
| 7943412 | Low temperature Bi-CMOS compatible process for MEMS RF resonators and filters | Leena Paivikki Buchwalter, Timothy J. Dalton, Christopher V. Jahnes, Jennifer Lund, Kevin S. Petrarca +2 more | 2011-05-17 |
| 7897960 | Self-aligned nanotube field effect transistor | Joerg Appenzeller, Phaedon Avouris, Philip G. Collins, Richard Martel, Hon-Sum Philip Wong | 2011-03-01 |
| 7888264 | MOSFET structure with multiple self-aligned silicide contacts | Christian Lavoie, Kern Rim | 2011-02-15 |
| 7872303 | FinFET with longitudinal stress in a channel | Qiqing C. Ouyang, Dae-Gyu Park, Xinhui Wang | 2011-01-18 |