Issued Patents 2011
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8039382 | Method for forming self-aligned metal silicide contacts | Sunfei Fang, Randolph F. Knarr, Mahadevaiyer Krishnan, Renee T. Mo, Balasubramanian Pranatharthiharan +1 more | 2011-10-18 |
| 8039331 | Opto-thermal annealing methods for forming metal gate and fully silicided gate-field effect transistors | Scott D. Allen, Cyril Cabral, Jr., Kevin K. Dezfulian, Sunfei Fang, Brian J. Greene +6 more | 2011-10-18 |
| 8030154 | Method for forming a protection layer over metal semiconductor contact and structure formed thereon | Ahmet S. Ozcan, Zhen Zhang, Bin Yang | 2011-10-04 |
| 8021971 | Structure and method to form a thermally stable silicide in narrow dimension gate stacks | Anthony G. Domenicucci, Ahmet S. Ozcan | 2011-09-20 |
| 8003473 | Bipolar transistor with silicided sub-collector | Francois Pagette, Anna W. Topol | 2011-08-23 |
| 8003453 | Self-aligned process for nanotube/nanowire FETs | Phaedon Avouris, Roy A. Carruthers, Jia Chen, Christopher G. M. M. Detavernier, Hon-Sum Philip Wong | 2011-08-23 |
| 8003524 | Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement | Chih-Chao Yang, Simon Gaudet, Shom Ponoth, Terry A. Spooner | 2011-08-23 |
| 7993987 | Surface cleaning using sacrificial getter layer | Randolph F. Knarr, Ahmet S. Ozcan, Filippos Papadatos | 2011-08-09 |
| 7932169 | Interconnection for flip-chip using lead-free solders and having improved reaction barrier layers | Luc Belanger, Stephen L. Buchwalter, Leena Paivikki Buchwalter, Ajay P. Giri, Jonathan H. Griffith +8 more | 2011-04-26 |
| 7927895 | Varying capacitance voltage contrast structures to determine defect resistance | Conal E. Murray, Oliver D. Patterson, Robert L. Wisnieff | 2011-04-19 |
| 7923838 | Method and structure for reducing contact resistance between silicide contact and overlying metallization | Conal E. Murray, Kenneth P. Rodbell | 2011-04-12 |
| 7888264 | MOSFET structure with multiple self-aligned silicide contacts | Kevin K. Chan, Kern Rim | 2011-02-15 |