Issued Patents 2004
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6835989 | Methods to form dual metal gates by incorporating metals and their conductive oxides | Wenhe Lin, Kin Leong Pey, Simon Chooi | 2004-12-28 |
| 6828082 | Method to pattern small features by using a re-flowable hard mask | Chew Hoe Ang, Eng Hua Lim, Randall Cher Liang Cha, Jia Zhen Zheng, Elgin Quek +1 more | 2004-12-07 |
| 6813796 | Apparatus and methods to clean copper contamination on wafer edge | Sudipto Ranendra Roy, Subhash Gupta, Simon Chooi, Xu Yi, Yakub Aliyu +2 more | 2004-11-09 |
| 6750519 | Dual metal gate process: metals and their silicides | Wenhe Lin, Kin Leong Pey, Simon Chooi | 2004-06-15 |
| 6740580 | Method to form copper interconnects by adding an aluminum layer to the copper diffusion barrier | Subhash Gupta, Chyi S. Chern | 2004-05-25 |
| 6730591 | Method of using silicon rich carbide as a barrier material for fluorinated materials | Licheng M. Han, Xu Yi, Simon Chooi, Joseph Xie | 2004-05-04 |
| 6720204 | Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding | John Sudijono, Yakub Aliyu, Simon Chooi, Subhash Gupta, Sudipto Ranendra Roy +2 more | 2004-04-13 |
| 6705512 | Method of application of conductive cap-layer in flip-chip, cob, and micro metal bonding | Kwok Keung Paul Ho, Simon Chooi, Yi Xu, Yakub Aliyu, John Sudijono +2 more | 2004-03-16 |
| 6692579 | Method for cleaning semiconductor structures using hydrocarbon and solvents in a repetitive vapor phase/liquid phase sequence | Sudipto Ranendra Roy, Yi Xu, Simon Chooi, Yakub Aliyu, John Sudijono +2 more | 2004-02-17 |
| 6690091 | Damascene structure with reduced capacitance using a boron carbon nitride passivation layer, etch stop layer, and/or cap layer | Simon Chooi, Yi Xu | 2004-02-10 |
| 6683002 | Method to create a copper diffusion deterrent interface | Simon Chooi, Yakub Aliyu, John Sudijono, Subhash Gupta, Sudipto Ranendra Roy +2 more | 2004-01-27 |
| 6677652 | Methods to form dual metal gates by incorporating metals and their conductive oxides | Wenhe Lin, Kin Leong Pey, Simon Chooi | 2004-01-13 |