Issued Patents 2002
Showing 1–3 of 3 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6461529 | Anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch scheme | Stuart M. Burns, Hussein I. Hanafi, Waldemar Walter Kocon, William C. Wille, Richard S. Wise | 2002-10-08 |
| 6440808 | Damascene-gate process for the fabrication of MOSFET devices with minimum poly-gate depletion, silicided source and drain junctions, and low sheet resistance gate-poly | Stephen Bruce Brodsky, Hussein I. Hanafi, Ronnen Andrew Roy | 2002-08-27 |
| 6353249 | MOSFET with high dielectric constant gate insulator and minimum overlap capacitance | Hussein I. Hanafi, Meikei Ieong, Wesley C. Natzle | 2002-03-05 |