Issued Patents 2002
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6440808 | Damascene-gate process for the fabrication of MOSFET devices with minimum poly-gate depletion, silicided source and drain junctions, and low sheet resistance gate-poly | Diane C. Boyd, Hussein I. Hanafi, Ronnen Andrew Roy | 2002-08-27 |
| 6388327 | Capping layer for improved silicide formation in narrow semiconductor structures | Kenneth J. Giewont, Cyril Cabral, Jr., Anthony G. Domenicucci, Craig Ransom, Yun-Yu Wang +2 more | 2002-05-14 |