Issued Patents All Time
Showing 26–32 of 32 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6921697 | Method for making trench MIS device with reduced gate-to-drain capacitance | Mohamed N. Darwish, Frederick P. Giles, Kam Hong Lui, Kyle Terrill | 2005-07-26 |
| 6903412 | Trench MIS device with graduated gate oxide layer | Mohamed N. Darwish, Christiana Yue, Frederick P. Giles, Kam Hong Lui, Kyle Terrill +1 more | 2005-06-07 |
| 6882000 | Trench MIS device with reduced gate-to-drain capacitance | Mohamed N. Darwish, Frederick P. Giles, Kam Hong Lui, Kyle Terrill | 2005-04-19 |
| 6875657 | Method of fabricating trench MIS device with graduated gate oxide layer | Christiana Yue, Mohamed N. Darwish, Frederick P. Giles, Kam Hong Lui, Kyle Terrill +1 more | 2005-04-05 |
| 6849898 | Trench MIS device with active trench corners and thick bottom oxide | Mohamed N. Darwish, Frederick P. Giles, Kam Hong Lui, Kyle Terrill | 2005-02-01 |
| 6709930 | Thicker oxide formation at the trench bottom by selective oxide deposition | Ben Chan, Kam Hong Lui, Christiana Yue, Ronald Wong, David Chang +5 more | 2004-03-23 |
| 5689128 | High density trenched DMOS transistor | Fwu-Iuan Hshieh, Mike F. Chang, Richard K. Williams, Mohamed N. Darwish | 1997-11-18 |